Zobrazeno 1 - 10
of 398
pro vyhledávání: '"K. Lischka"'
Publikováno v:
J Neurosci
Multimodal integration facilitates object recognition and response to sensory cues. This depends on spatiotemporal coincidence of sensory information, recruitment of NMDA-type glutamate receptors and inhibitory feedback. Shepherd's crook neurons (SCN
Akademický článek
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Autor:
Kurt Erlacher, Bernard Lotz, K. Lischka, Günther Leising, Bert Müller, T. Kuhlmann, Roland Resel, Stefan Hampel, Annette Thierry
Publikováno v:
Surface Science. 437:191-197
para -Hexaphenyl grows on GaAs (001) in well-defined, three-dimensional islands of a needle-like shape. The needles are oriented in 〈100〉 with respect to GaAs. The orientation of the hexaphenyl molecules within the needles has been studied using
Publikováno v:
Surface Science. 418:256-266
The morphology of para-hexaphenyl (PHP) grown on GaAs(001) by molecular beam epitaxy has been studied using atomic force microscopy (AFM). For elevated substrate temperatures between 90 and 170°C and a deposition rate of 0.7 A s−1, it was found th
Publikováno v:
Journal of Applied Crystallography. 30:905-908
A new experimental set-up is described that allows the measurement of the X-ray reflectivity of thin layers that are contained in a growth chamber (in situ). The X-ray reflectivity measured with our angular dispersive glancing incidence reflectometer
Publikováno v:
Semiconductor Science and Technology. 11:1718-1724
The equivalent parallel capacitance and conductance of a metal - insulator - semiconductor (MIS) device prepared on low-concentration p-type exhibit, in an external magnetic field, well-resolved oscillations both as a function of gate voltage and mag
Autor:
I. Loa, M. Hankeln, P. Thurian, D. Schikora, Christian Thomsen, H. Siegle, G. Kaczmarczyk, Axel Hoffmann, L. Filippidis, K. Lischka
Publikováno v:
Zeitschrift für Physikalische Chemie. 1:187-193
Autor:
T. Widmer, D. Schikora, M. von Ortenberg, C. Prott, G. Machel, Peter Schäfer, S. Luther, K. Lischka
Publikováno v:
Solid-State Electronics. 40:63-67
Single quantum wells (SQW) and superlattices of mercury-iron selenide (HgSe:Fe) have been grown by molecular beam epitaxy (MBE) and characterized by in-situ high-energy electron diffraction (RHEED) and magneto spectroscopy investigations. The influen
Publikováno v:
Semiconductor Science and Technology. 10:1614-1620
The structural properties of short-period molecular beam epitaxy grown p-i-n doped Si17Ge2 superlattices with ten, five and two periods were investigated by X-ray triple-axis diffractometry and X-ray reflectivity at glancing incidence. The X-ray anal
Autor:
K. Lischka, T. Widmer, G. Machel, C. Prott, M von Ortenberg, S. Luther, D. Schikora, B. Schöttker
Publikováno v:
Semiconductor Science and Technology. 10:1264-1268
We report on the growth and the iron doping of epitaxial HgSe layers by molecular beam epitaxy. The structural and the electronic properties of layers are characterized. The processes limiting growth rate are investigated, indicating that absorption