Zobrazeno 1 - 10
of 16
pro vyhledávání: '"K. L. Fry"'
Publikováno v:
Journal of Cataract and Refractive Surgery. 30:702-705
We present a patient in whom laser in situ keratomileusis was used to treat residual hyperopia with astigmatism after conductive keratoplasty (CK). Previous CK did not affect initial flap creation, the ability to lift the flap manually 3 weeks after
Publikováno v:
Reproduction, Fertility and Development. 27:164
The aim of this experiment was to investigate the effect of day of synchrony on the pregnancy rate of recipients following the transfer of Day 7 IVF embryos. In addition, the effect of IVF embryo grade and corpus luteum (CL) grade of recipients was d
Publikováno v:
Ophthalmology. 112(11)
Purpose To assess the outcomes of conductive keratoplasty (CK) for patients with complications related to LASIK or photorefractive keratectomy (PRK). Design Retrospective, noncomparative, interventional case series. Participants Sixteen eyes of 15 pa
Autor:
K. L. Fry
Publikováno v:
Open-File Report.
Publikováno v:
Reproduction, Fertility and Development. 22:231
Pregnancy rates after the transfer of bovine IVP embryos are lower than that achieved after the transfer of MOET embryos. One reason may be that the relatively defined IVC (SOFaaBSA) culture system used in vitro is suboptimal for embryo development.
Publikováno v:
Journal of Applied Physics. 66:5384-5387
High‐quality Ga0.51In0.49P, lattice‐matched to GaAs, has been grown by atmospheric pressure organometallic vapor‐phase epitaxy. The growth was performed at a temperature of 680 °C and a growth rate of about 12 μm/h. The indium distribution co
Publikováno v:
Journal of Applied Physics. 63:2674-2680
InP/GaInAs/InP quantum‐well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (AP‐OMVPE). The effects of growth parameters such as V/III ratio and substrate orientation have been studied. For thin wells the
Publikováno v:
Journal of Applied Physics. 65:2451-2456
This paper presents results of organometallic vapor‐phase‐epitaxial growth of low dislocation density GaAs1−xPx on GaAs, utilizing a thin compositionally graded layer (2 μm) and a strained‐layer superlattice (SLS) to reduce the dislocation d
Publikováno v:
Journal of Applied Physics. 66:5554-5563
The photoluminescence (PL) from thin GaInAs/InP single quantum wells (SQWs) grown by atmospheric pressure organometallic vapor phase epitaxy is investigated. The 10‐K PL intensity from the SQWs is as much as 25 times stronger than that from approxi
Publikováno v:
Journal of Electronic Materials. 14:231-244
High quality GaxIn1−xAs, lattice matched to InP, has been reproducibly grown by organometallic vapor phase epitaxy using trimethylgallium (TMGa), trimethylindium (TMIn), and AsH3 in an atmospheric pressure reactor with no observable adduct formatio