Zobrazeno 1 - 10 of 21 pro vyhledávání: '"K. L. Enisherlova"'
1
The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT
Autor: Yu. V. Kolkovsky, K. L. Enisherlova, S. A. Kapilin, B. K. Medvedev, E. M. Temper
Publikováno v: Russian Microelectronics. 49:603-611
In the field-effect transistors based on the wide-band-gap nitride heterostructures, the dielectric layers are in widespread use as one of the main elements in the active regions of the devices and the passivation layers. Stringent requirements are i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73803108de739140143c5b1bb4d827f4
https://doi.org/10.1134/s106373972008003x
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3
PECVD OBTAINED SiNx FILMS FOR THE PASSIVATION OF AlGaN/GaN HEM
Autor: L. A. Seydman, Yu. A. Kontsevoy, K. L. Enisherlova, S. V. Minnebaev
Publikováno v: Electronic engineering Series 2 Semiconductor devices. 258:22-33
In this paper we study the process of using PECVD to obtain SiNx films, which serve as a dielectric passivation layers for AlGaN/GaN structures. Aim of this study was to determine the methods of controlling the properties of the films. The deposition
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9901c5d76652e6cf326fea0344721c6
https://doi.org/10.36845/2073-8250-2020-258-3-22-33
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4
The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT
Autor: K. L. Enisherlova, E. M. Temper, V. I. Korneev, B. K. Medvedev
Publikováno v: Russian Microelectronics. 48:564-575
The effect of the microrelief, dislocation structure, and other defects of epitaxial layers in the source and drain regions of a Nitride High Electron Mobility Transistor (НЕМТ) on the parameters of the formed ohmic contacts is discussed. The inv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e824d69435e8e56db82a48f62578d2a4
https://doi.org/10.1134/s1063739719080055
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5
Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT
Autor: V. I. Korneev, B. K. Medvedev, K. L. Enisherlova, E. M. Temper
Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 21:182-193
In this paper are considers the effect of the microrelief, dislocation structure and other defects of the epitaxial layers of the source and drain regions of the nitride HEMT transistors on the parameters of the formed ohmic contacts. The studies wer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43da33d2b1fb8c180972c9f1007717ef
https://doi.org/10.17073/1609-3577-2018-3-182-193
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6
Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes
Autor: K. L. Enisherlova, A. V. Lutzau, E. M. Temper
Publikováno v: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:578-585
The possibility of using symmetric and asymmetric X-ray schemes on an XMD-300 single-crystal diffractometer to estimate the crystal structure of AlGaN/GaN heterostructure buffer layers is investigated. The developed algorithm for calculating the angl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5339865d015344baa738bc0367bd08d7
https://doi.org/10.1134/s1027451019040104
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7
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs
Autor: E. A. Bobrova, Yu. V. Kolkovskii, K. L. Enisherlova, E. M. Temper, S. A. Kapilin
Publikováno v: Russian Microelectronics. 48:28-36
This study deals with the capacity–voltage (С–V) characteristics of the gate–drain regions of crystals of high-power microwave HEMT transistors with a large gate periphery of the S and Х bands and a source–drain breakdown voltage VDS rangin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e7bb9b59ffd76c7b45a62fa3f08a15b
https://doi.org/10.1134/s1063739719010049
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8
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators
Autor: Yu. V. Kolkovsky, S. A. Kapilin, N. V. Davydov, V. V. Gruzdov, K. L. Enisherlova
Publikováno v: Russian Microelectronics. 47:526-531
Microwave HEMT transistors based on gallium nitride (a novel wide-band-gap material) allow us to construct advanced radioelectronic systems. Therefore, the determination of the relation between the parameters of the transistor structure and the chara
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9a89a187b95c7d1119c1b3248175e23
https://doi.org/10.1134/s106373971807003x
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9
The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them
Autor: V. G. Goryachev, K. L. Enisherlova, V. G. Saraykin, S. A. Kapilin
Publikováno v: Russian Microelectronics. 46:591-599
AlGaN/GaN heterostructures and AlGaN/GaN/SiC HEMT-transistors’ Schottky barriers (SBs) are studied by the capacitance–voltage (CV) method and the SIMS method in order to determine the causes of the capacitance instability in some cases. It is sho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f18631c270da95cc8600628a9b20621
https://doi.org/10.1134/s1063739717080066
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