Výsledky vyhledávání - "K. L. Bunker"

High efficiency GaN-based LEDs and lasers on SiC

Autor: James Ibbetson, K. L. Bunker, Phil Russel, Michael Leung, Jayesh Bharathan, David B. Slater, Amber C. Abare, Kevin Haberern, Dave Emerson, John Adam Edmond, Mike Bergman

Publikováno v: Journal of Crystal Growth. 272:242-250

Group III-nitride layers have been grown via metal-organic vapor-phase epitaxy (MOVPE) on single crystal-silicon carbide (SiC) substrates and fabricated into light-emitting diodes (LEDs) and laser diodes (LDs). Deep ultraviolet (UV) LEDs from 321 to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d2f338871667636a43496cd6d28b12b1
https://doi.org/10.1016/j.jcrysgro.2004.08.056

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Electrical characterization of InGaN quantum well p–n heterostructures

Autor: A. D. Batchelor, Phillip E. Russell, K. L. Bunker, J. C. González, M. I. N. da Silva

Publikováno v: Microelectronics Journal. 34:455-457

In this work, two methods for electrical characterization of InGaN quantum well p–n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca4dd63ce3055d51ff1e74781e790ab6
https://doi.org/10.1016/s0026-2692(03)00072-7

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Minority-carrier diffusion length in a GaN-based light-emitting diode

Autor: J. C. González, K. L. Bunker, Phillip E. Russell

Publikováno v: Applied Physics Letters. 79:1567-1569

Minority-carrier diffusion lengths of electrons and holes were measured in a GaN-based light-emitting diode using the electron-beam-induced current technique in the line-scan configuration. A theoretical model with an extended generation source and a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02370c5485a2d5a62048e2fa2dd1de5c
https://doi.org/10.1063/1.1400075

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Focused Ion Beam Sample Preparation of Complex Devices

Autor: T. J. Stark, J P Vitarelli, K. L. Bunker, Phillip E. Russell, Roberto Garcia

Publikováno v: Microscopy and Microanalysis. 11

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d59f2d412c65c8eb17d8314badccc238
https://doi.org/10.1017/s1431927605501284

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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light-Emitting Diode

Autor: Phillip E. Russell, K. L. Bunker, Roberto Garcia

Publikováno v: Microscopy and Microanalysis. 11

Scanning Electron Microscopy (SEM)-based Cathodoluminescence (CL) experiments were used to study the influence of piezoelectric fields on the optical and electrical properties of a commercial InGaN-based Multiple Quantum Well (MQW) Light Emitting Dio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32ae0a967362f343943f2a29cbfda17a
https://doi.org/10.1017/s1431927605507815

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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light Emitting Diode

Autor: K. L. Bunker, Roberto Garcia, Phillip E. Russell

Publikováno v: MRS Proceedings. 831

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86ed62ea8bb42299425fe2d5a9f529de
https://doi.org/10.1557/proc-831-e11.41

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