Zobrazeno 1 - 10
of 31
pro vyhledávání: '"K. Löhnert"'
Autor:
Erich Kubalek, K. Löhnert
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f563ca8c8798e65c1f1cc3fd1e802e28
https://doi.org/10.1201/9781003069614-46
https://doi.org/10.1201/9781003069614-46
Autor:
K. Löhnert, Florian Pyczak
Publikováno v:
Superalloy 718 and Derivatives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e50e644a3a7d57ef12d587715f9dbb
https://doi.org/10.1002/9781118495223.ch67
https://doi.org/10.1002/9781118495223.ch67
Autor:
Florian Pyczak, K. Löhnert
Publikováno v:
7th International Symposium on Superalloy 718 and Derivatives (2010).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de265494a19b7f0f421cc91a6399bcee
https://doi.org/10.7449/2010/superalloys_2010_877_891
https://doi.org/10.7449/2010/superalloys_2010_877_891
Autor:
M. Baumgartner, K. Löhnert
Publikováno v:
Applied Surface Science. 50:222-227
The mapping of near-band-gap photoluminescence intensity is used as a method for characterizing the uniformity of wafer properties which is an essential requirement for fabrication of integrated circuits on si-GaAs substrates. The surface effects on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9c3f7adf984bde75af69ec3991770e
https://doi.org/10.1016/0169-4332(91)90169-k
https://doi.org/10.1016/0169-4332(91)90169-k
Autor:
M. Baumgartner, K. Löhnert
Publikováno v:
Japanese Journal of Applied Physics. 29:8
The properties of ion-implanted layers in undoped s.i. GaAs substrates have been studied and found to be correlated to the initial bulk resistivity of the wafers, which in turn is determined by the content of residual shallow acceptors. With decreasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27c2cd59a5d55a8a0bbdd956581e5fee
https://doi.org/10.1143/jjap.29.8
https://doi.org/10.1143/jjap.29.8
Publikováno v:
Le Journal de Physique Colloques. 45:C2-861
The electron beam induced conductivity (EBIC) of zinc oxide varistor ceramics is studied in the scanning electron microscope (SEM). It is found that only particular grain boundaries give rise to an EBIC signal and that the signal strength and its lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a33647ff1fc8871999e5c6cfbfe16a
https://doi.org/10.1051/jphyscol:19842197
https://doi.org/10.1051/jphyscol:19842197
Publikováno v:
Applied Physics. 15:149-152
Directly measured unsaturated gain spectra of GaAs-GaAlAs double heterostructure wafers at above-threshold conditions are reported for different temperatures. Maximum gain values are in the order of 100 cm−1 for room temperature and up to 1000 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436e776ccaa0f6eefe0b2d5beb2866d4
https://doi.org/10.1007/bf00928199
https://doi.org/10.1007/bf00928199
Time resolved cathodoluminescence in the scanning electron microscope by use of the streak technique
Publikováno v:
Journal of Microscopy. 118:303-308
SUMMARY Minority carrier lifetime is one of the basic material properties in optoelectronic devices and material. Both the micrometer range dimensions of the devices and lifetime variations around defects in materials require a lifetime measurement t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30599f41aa26c5ea5b81f14cbee0e896
https://doi.org/10.1111/j.1365-2818.1980.tb00277.x
https://doi.org/10.1111/j.1365-2818.1980.tb00277.x
Autor:
K. Löhnert, Erich Kubalek
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 41:138-141
The potential of the cathodoluminescence (CL) technique in the SEM or STEM for the investigation of semiconducting materials and devices is based on the fact, that it enables the evaluation of inhomogeneities in electronic material properties on a mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61450b3125168ba7513f08ce52ab651f
https://doi.org/10.1017/s0424820100074549
https://doi.org/10.1017/s0424820100074549
Autor:
K. Löhnert, Erich Kubalek
Publikováno v:
Physica Status Solidi (a). 80:173-183
The degradation behaviour of GaP: N: Zn LED's is studied using spatially resolved cathodoluminescence and electron beam induced current measurements in addition to macroscopic device characterization. The degradation is caused by a decrease of the lu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc5b4b81dbba52df178ecb82f85b97b
https://doi.org/10.1002/pssa.2210800119
https://doi.org/10.1002/pssa.2210800119