Zobrazeno 1 - 10
of 105
pro vyhledávání: '"K. Kosiel"'
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 63, Iss No 3, Pp 1077-1082 (2018)
The paper presents the effect of ZrO2 layer deposition by the ALD process on the physicochemical properties of cobalt-based alloys (Realloy C and EOS CoCr SP2) intended for application in prosthetic dentistry. The paper shows the results of the surfa
Externí odkaz:
https://doaj.org/article/cbae1f6bba3947ba9a9159535cc92c8f
Autor:
D. Sztenkiel, M. Foltyn, G. P. Mazur, R. Adhikari, K. Kosiel, K. Gas, M. Zgirski, R. Kruszka, R. Jakiela, Tian Li, A. Piotrowska, A. Bonanni, M. Sawicki, T. Dietl
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
The wurtzite crystal structure of nitride semiconductors results in strong piezoelectricity. Here, the authors also achieve electric-field control of the magnetization of gallium manganese nitride, thus showing that piezoelectric and magnetoelectric
Externí odkaz:
https://doaj.org/article/9e193e90d8744793be700009d1855718
Akademický článek
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Akademický článek
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Autor:
Marcin Motyka, Jan Misiewicz, J. Kubacka-Traczyk, Grzegorz Sęk, M. Bugajski, M. Dyksik, Damian Pucicki, K. Kosiel, W. Rudno-Rudziński, I. Sankowska
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 37:710-719
In this work, AlGaAs/GaAs superlattice, with layers’ sequence and compositions imitating the active and injector regions of a quantum cascade laser designed for emission in the terahertz spectral range, was investigated. Three independent absorptio
Publikováno v:
Thin Solid Films. 564:339-344
In this paper, the X-ray diffraction profiles of Quantum Cascade Laser (QCL) structures have been investigated. The examined structures were grown by molecular beam epitaxy. The crystallographic characterization was carried out using high resolution
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:59-61
Publikováno v:
physica status solidi (c). 1:392-395
We discuss several problems of optimisation of the MBE growth of thick (3.5 ÷ 9 μm) InAs epilayers on GaAs(100) substrates. Three types of layers were grown: undoped, Si-doped, and Be-doped. The whole growth process has been divided into two parts:
Autor:
O. Pelya, Witold Dobrowolski, Tadeusz Wosinski, K. Kosiel, A. Mąkosa, L. A. Dobrzański, Tadeusz Figielski
Publikováno v:
Materials Science Forum. :27-30
We studied fine oscillatory structure (FOS) appearing on the rising slope of the current peak in resonant tunneling diodes. FOS is a manifestation of the quantum interference caused by reflection of a part of electron wave transmitted through the dou
Publikováno v:
Journal of Wide Bandgap Materials. 9:93-100