Zobrazeno 1 - 10
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pro vyhledávání: '"K. Konuma"'
Akademický článek
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Autor:
N. Matsuura, T. Sanada, Y. Amagasa, Takayuki Nakamura, Y. Kawashima, N. Takita, H. Gonda, M. Fukuda, H. Tamura, M. Kobayashi, Y. Suto, K. Konuma, K. Kobayashi, A. Hasegawa, M. Ikeda, A. Suzuki, M. Shimura, S. Shibata, C. Aoyagi, Yoichi Kon
Publikováno v:
Annals of Oncology. 29:viii573
Akademický článek
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Autor:
M. Fukuda, C. Aoyagi, T. Sanada, Yoichi Kon, Y. Amagasa, H. Gonda, K. Konuma, A. Suzuki, Y. Suto, S. Shibata, Takayuki Nakamura
Publikováno v:
Annals of Oncology. 28:v504
Autor:
Y. Hasegawa, K. Kobayashi, Takayuki Nakamura, N. Takita, M. Shimura, K. Konuma, Y. Suto, M. Fukuda, T. Sanada, S. Shibata, H. Yoshida, A. Suzuki, H. Gonda, Aya Nishiwaki, S. Onuki, C. Aoyagi, Yoichi Kon
Publikováno v:
Annals of Oncology. 27:vi463
Publikováno v:
Physical Review B. 51:13187-13191
Internal photoemission spectroscopy characteristics for a PtSi/p-type Si Schottky-barrier diode have been studied. The authors present a one-dimensional calculation of the internal photoemission spectroscopy for Schottky-barrier diodes, taking into a
Publikováno v:
Journal of Applied Physics. 76:2181-2184
PtSi film epitaxial orientation and morphology depend greatly on the Si(001) substrate temperature during Pt deposition. 15 nm Pt films were evaporated on the heated substrate in room‐temperature to the 1100 K range. The PtSi on the Si substrate fo
Publikováno v:
Applied Surface Science. :564-568
Ultrathin epitaxial films of β-FeSi2 were grown on Si(001) by room temperature (RT) deposition of Fe followed by annealing. During the various stages of the growth process the lattice structure, composition and morphology of the films were investiga
Publikováno v:
Journal of Applied Physics, 73(3), 1104-1109
Journal of Applied Physics, 73(3), 1104-1109. AMER INST PHYSICS
Journal of Applied Physics, 73(3), 1104-1109. AMER INST PHYSICS
Ultrathin (∼1.3 nm) epitaxial films of β-FeSi2 were grown on Si(001) by room temperature (RT) deposition of Fe followed by annealing. During the various stages of the growth process, the lattice structure, composition, and morphology of the films
Publikováno v:
IEEE Electron Device Letters. 22:426-428
We fabricated a carbon-nanotube-based triode-field-emission display with a gated emitter structure made up of a gate layer, a thin insulating layer, and a carbon nanotube layer. A low threshold voltage of 20 V and a total anode current of 0.5 mA at 8