Zobrazeno 1 - 10
of 28
pro vyhledávání: '"K. Kliefoth"'
Publikováno v:
Semiconductor Science and Technology. 19:133-141
We have studied and compared the effects of conventional annealing in a forming gas atmosphere (430 °C, 20 min) and rapid thermal annealing (RTA) in an inert Ar atmosphere (400–1000 °C, 30 s) on Al/SiOxNyHz/Si devices. The samples were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7e01f09061b239eb32f7d78a06ce0cb
https://doi.org/10.1088/0268-1242/19/2/001
https://doi.org/10.1088/0268-1242/19/2/001
Publikováno v:
Journal of Non-Crystalline Solids. :663-667
Heterojunction solar cells consisting of an n-type a-Si:H(n) emitter and a p-type monocrystalline silicon wafer have been studied with particular emphasis on the role of interface recombination. It is shown that the form of the I – V characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a15b75972815e9b5ad5cfc12efe7ba50
https://doi.org/10.1016/s0022-3093(01)01029-8
https://doi.org/10.1016/s0022-3093(01)01029-8
Publikováno v:
Journal of Applied Physics. 88:842-849
Modulation capacitance voltage spectroscopy is applied to study the interaction between interface defect states and the conduction band of thermally oxidized n-type silicon wafers, which were prepared using a broad spectrum of preparation conditions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6843100b55737975d6286eb95ba2afa
https://doi.org/10.1063/1.373746
https://doi.org/10.1063/1.373746
Publikováno v:
Microelectronic Engineering. 48:159-162
The dispersion behavior of traps at the Si SiO 2 interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of different material parameters and preparation conditions were used to vary the state density di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcda21cb399d0ac2ef80b9b9bbcdfee
https://doi.org/10.1016/s0167-9317(99)00361-5
https://doi.org/10.1016/s0167-9317(99)00361-5
Publikováno v:
Solar Energy Materials and Solar Cells. 48:43-52
We present a method for determining the voltage and current loss in solar cells using the modulation capacitance voltage measuring technique. Both losses can be investigated in the forward biased mode and the generator mode. The method is especially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::469380c688b069ff0e7c5f2b4fe163e9
https://doi.org/10.1016/s0927-0248(97)00067-6
https://doi.org/10.1016/s0927-0248(97)00067-6
Publikováno v:
Microelectronic Engineering. 36:43-46
The evolution of dangling bond defects on initially H-terminated Si(111) surfaces was correlated to the wet-chemical oxide growth on an atomic scale. The dangling bond induced distribution of interface states was monitored by surface photovoltage mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b9d27517c4600b987883c685c2a1cc4
https://doi.org/10.1016/s0167-9317(97)00012-9
https://doi.org/10.1016/s0167-9317(97)00012-9
Publikováno v:
Microelectronic Engineering. 28:51-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4868936bd742b27c4a60d033e3f3c988
https://doi.org/10.1016/0167-9317(95)00014-y
https://doi.org/10.1016/0167-9317(95)00014-y
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
From modulation capacitance voltage (MCV) measurements we determined a voltage V/sub s/ of several hundred mV at the depletion region in CuInS/sub 2/ under PV generator and short circuit working conditions. In this solar cell type electron transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7b786685cb8eed0c8a2886c63e7a7d
https://doi.org/10.1109/pvsc.1997.654129
https://doi.org/10.1109/pvsc.1997.654129
Publikováno v:
E-Prints Complutense. Archivo Institucional de la UCM
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90be19cc08821387f5fb0220aff54bea
https://eprints.ucm.es/id/eprint/26254/1/Martil,68.pdf
https://eprints.ucm.es/id/eprint/26254/1/Martil,68.pdf
Publikováno v:
MRS Proceedings. 426
The junction properties of isotype and anisotype n+-ZnO/c-Si heterostructures have been studied by electrical and photoelectrical methods. We present evidence that the junction properties are strongly affected by a 10–30 nm thick ZnO layer closest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573be1db680e6dbe81e833ca9eee31d5
https://doi.org/10.1557/proc-426-135
https://doi.org/10.1557/proc-426-135