Zobrazeno 1 - 10
of 31
pro vyhledávání: '"K. Kivilahti"'
Publikováno v:
Computational Materials Science. 50:690-697
In the present study, an algorithm, combining the Potts model based Monte Carlo (MC) and finite element methods, is developed in order to predict the dynamic recrystallization of tin in tin-rich lead-free solder interconnections during thermal cyclin
Publikováno v:
Chemistry of Materials. 17:2223-2226
Cross-sectional SEM-BSE image of the Sn−3.5%Ag−0.5%Cu solder interface showing a high magnification microstructure of the rapid variation of the thick and thin IMC layer.
Publikováno v:
Laurila, T, Zeng, K, Kivilahti, J K, Molarius, J & Suni, I 2002, ' TaC as a diffusion barrier between Si and Cu ', Journal of Applied Physics, vol. 91, no. 8, pp. 5391-5399 . https://doi.org/10.1063/1.1464652
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been studied experimentally and theoretically by utilizing ternary Si-Ta-C and Ta-C-Cu phase diagrams as well as activity diagrams calculated at 800 °C. W
Publikováno v:
Laurila, T, Zeng, K, Molarius, J, Riekkinen, T, Suni, I & Kivilahti, J K 2002, ' Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems ', Microelectronic Engineering, vol. 64, no. 1-4, pp. 279-287 . https://doi.org/10.1016/S0167-9317(02)00800-6
The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron micros
Publikováno v:
Journal of Applied Physics. 89:4843-4849
The reaction kinetics of eutectic SnPb solder on Cu were studied and compared in the liquid state at 200 to 240 °C and in the solid state aged at 125–170 °C. The ternary phase diagrams of SnPbCu, the morphology of intermetallic compound (IMC), an
Publikováno v:
IEEE Transactions on Advanced Packaging. 24:515-520
To decrease the bonding temperature required for eutectic SnAg solder, SnAg solder bumps were chemically coated with a pure Bi layer. During heating, a low melting eutectic forms between the Bi coating and the SnAg, enabling bonding at temperatures b
Publikováno v:
Laurila, T, Zeng, K, Kivilahti, J, Molarius, J & Suni, I 2001, ' Effect of Oxygen on the reactions in the Si/Ta/Cu metallization system ', Journal of Materials Research, vol. 16, no. 10, pp. 2929-2946 . https://doi.org/10.1557/JMR.2001.0404
The effect of oxygen on the reaction mechanisms in the Si/Ta/Cu metallization system was studied experimentally and by utilizing the thermodynamically assessed Ta–O binary system. It was presented that an interfacial tantalum oxide was formed betwe
Autor:
K. Heinonen, K. Kivilahti, Hannu Saloniemi, R. Pösö, Mikko Tuori, L.-A. Lindberg, Liisa Syrjälä-Qvist, Alem Tsehai Tesfa, T. Saukko
Publikováno v:
Animal Feed Science and Technology. 76:275-295
Animal performances were monitored in 30 Friesean dry cows (18 multiparous, MP-cows and 12 primiparous, PP-cows) starting six weeks before calving to eight weeks after calving. The cows were kept indoors and fed individually with a prepartum diet con
Autor:
Kari Kulojärvi, Jorma K. Kivilahti
Publikováno v:
Microelectronics International. 15:16-19
A new under bump metallurgy (UBM) solution consisting of the TiW‐, Au‐ and Ni‐layers for solder flip chip applications has been developed. The metallurgy, being based on the well‐known TAB metallisation procedure, was modified by producing th
Publikováno v:
Microelectronics International. 15:20-24
The dissolution processes and subsequent intermetallic reactions between high tin solder bump alloys and Cu‐ or Ni‐based UBM‐metallisations were investigated both theoretically and experimentally. The results showed that when the Cu UBM layer i