Zobrazeno 1 - 10
of 134
pro vyhledávání: '"K. Ketata"'
Publikováno v:
Médecine et Maladies Infectieuses Formation. 2:S5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984de726f8249bf244059967132e4dd5
https://doi.org/10.1016/j.mmifmc.2023.03.018
https://doi.org/10.1016/j.mmifmc.2023.03.018
Publikováno v:
Microelectronics Reliability. 47:1406-1410
This paper reports the effects of high electric field stress (HEFS) and positive bias temperature instability (PBTI) in threshold voltage, input and Miller capacitances of N − channel power VDMOSFETs. The procedure used for this study is based on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1aa8ae65b32acb2910fe4ded1771a9e
https://doi.org/10.1016/j.microrel.2007.07.096
https://doi.org/10.1016/j.microrel.2007.07.096
Publikováno v:
Microelectronics Journal. 38:727-734
This paper reports the effects of bias temperature stress (positive and negative bias temperature instabilites, PBTI-NBTI) on threshold voltage, input capacitance and Miller capacitance of N-Channel Power MOSFET. The device is stressed with gate volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0b2aaf5aaf294fdf2efc27a6d3ab5ad
https://doi.org/10.1016/j.mejo.2007.04.015
https://doi.org/10.1016/j.mejo.2007.04.015
Publikováno v:
Microelectronics Journal. 38:164-170
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, air-air test) under various conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4a427c9ea3734253c0fee04347ca5f
https://doi.org/10.1016/j.mejo.2006.08.004
https://doi.org/10.1016/j.mejo.2006.08.004
Publikováno v:
Microelectronics Reliability. 47:59-64
This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3d4a8c412f98124e4097430093983f
https://doi.org/10.1016/j.microrel.2006.04.009
https://doi.org/10.1016/j.microrel.2006.04.009
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:250-254
This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8efa384170980355b12a973b311a5ef
https://doi.org/10.1016/j.nimb.2006.10.040
https://doi.org/10.1016/j.nimb.2006.10.040
Publikováno v:
Microelectronics Reliability. 46:1800-1805
This paper reports novel methods for accelerated ageing tests, with comparative reliability between them for stresses applied on power RF LDMOS: Thermal Shock Tests (TST), Thermal Cycling Tests (TCT), High Voltage Drain (HVD) and coupling thermal and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e873bb7db10f4db36532eefe96ecc56a
https://doi.org/10.1016/j.microrel.2006.07.073
https://doi.org/10.1016/j.microrel.2006.07.073
Autor:
Philippe Eudeline, K. Ketata, Mohamed Masmoudi, Karine Mourgues, Mohamed Ali Belaïd, J. Marcon, Clément Tolant, Hichame Maanane
Publikováno v:
Microelectronics Reliability. 46:994-1000
An innovative reliability test bench dedicated to RF power devices is currently implemented. This bench allows to apply both electric and thermal stress for lifetime test under radar pulsed RF conditions. This paper presents the first investigation f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f40a309512d693d4da6148de4296addb
https://doi.org/10.1016/j.microrel.2005.07.107
https://doi.org/10.1016/j.microrel.2005.07.107
Publikováno v:
Materials Science and Engineering: B. :335-340
Using a two-dimensional simulator, the effect of the thermal stress on static and dynamic vertical double-diffusion metal oxide semiconductor (VDMOS) characteristics have been investigated. The use of the device under certain thermal stress condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76f6bade8ca40ffa3ed580dd0efc918
https://doi.org/10.1016/j.mseb.2005.08.092
https://doi.org/10.1016/j.mseb.2005.08.092
Publikováno v:
Microelectronics Reliability. 45:1732-1737
We present in this paper results of comparative reliability study of three accelerated ageing tests applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test), Thermal Cycling Tests (TCT, air-air test) and High Temperature Storage Life (HTSL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ca5ca1eb123c6eafa11c3ac7977f9b
https://doi.org/10.1016/j.microrel.2005.07.099
https://doi.org/10.1016/j.microrel.2005.07.099