Zobrazeno 1 - 8
of 8
pro vyhledávání: '"K. J. Kirkby"'
Autor:
K. L. Small, N. T. Henthorn, D. Angal-Kalinin, A. L. Chadwick, E. Santina, A. Aitkenhead, K. J. Kirkby, R. J. Smith, M. Surman, J. Jones, W. Farabolini, R. Corsini, D. Gamba, A. Gilardi, M. J. Merchant, R. M. Jones
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract This paper presents the first plasmid DNA irradiations carried out with Very High Energy Electrons (VHEE) over 100–200 MeV at the CLEAR user facility at CERN to determine the Relative Biological Effectiveness (RBE) of VHEE. DNA damage yiel
Externí odkaz:
https://doaj.org/article/bc24ff85f48f4675af445482c6dc0f31
Autor:
D. Doria, K. F. Kakolee, S. Kar, S. K. Litt, F. Fiorini, H. Ahmed, S. Green, J. C. G. Jeynes, J. Kavanagh, D. Kirby, K. J. Kirkby, C. L. Lewis, M. J. Merchant, G. Nersisyan, R. Prasad, K. M. Prise, G. Schettino, M. Zepf, M. Borghesi
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 011209-011209-6 (2012)
The ultrashort duration of laser-driven multi-MeV ion bursts offers the possibility of radiobiological studies at extremely high dose rates. Employing the TARANIS Terawatt laser at Queen's University, the effect of proton irradiation at MeV-range ene
Externí odkaz:
https://doaj.org/article/e22a4ed4c5e3484bb3c62302c41414d1
Autor:
J. Schuemann, A. L. McNamara, J. W. Warmenhoven, N. T. Henthorn, K. J. Kirkby, M. J. Merchant, S. Ingram, H. Paganetti, K. D. Held, J. Ramos-Mendez, B. Faddegon, J. Perl, D. T. Goodhead, I. Plante, H. Rabus, H. Nettelbeck, W. Friedland, P. Kundrát, A. Ottolenghi, G. Baiocco, S. Barbieri, M. Dingfelder, S. Incerti, C. Villagrasa, M. Bueno, M. A. Bernal, S. Guatelli, D. Sakata, J. M. C. Brown, Z. F
Publikováno v:
Radiation Research
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::27191f7fdafb7a12ca2be5e000b740a5
Autor:
M. Kah, A. J. Smith, J. J. Hamilton, S. H. Yeong, B. Columbeau, R. Gwilliam, R. P. Webb, K. J. Kirkby, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Highly active, ultra‐shallow and abrupt dopant profiles are required for future generations of CMOS devices. A possible way to achieve this is to use pre‐amorphization implantation (PAI) and solid phase epitaxial re‐growth. B and BF2 implants w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8796c26b6ff057fef1da4202549b8ca4
https://doi.org/10.1063/1.3033676
https://doi.org/10.1063/1.3033676
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1559a612e9da288c06086d6a83090a9d
https://doi.org/10.1142/9789812810076_0009
https://doi.org/10.1142/9789812810076_0009
Autor:
M Sotiropoulos, M J Taylor, N T Henthorn, J W Warmenhoven, R I Mackay, K J Kirkby, M J Merchant
Publikováno v:
Biomedical Physics & Engineering Express; Apr2017, Vol. 3 Issue 2, p1-1, 1p
Publikováno v:
Physics in Medicine & Biology; 8/21/2015, Vol. 60 Issue 16, p1-1, 1p
Publikováno v:
Physics in Medicine & Biology; 11/7/2014, Vol. 59 Issue 21, p1-1, 1p