Výsledky vyhledávání - "K. J. Hubbard"

An oxygen-compatible radiant substrate heater for thin film growth at substrate temperatures up to 1050 °C

Autor: J. C. Clark, J. P. Maria, Darrell G. Schlom, K. J. Hubbard

Publikováno v: Review of Scientific Instruments. 68:2538-2541

The design and performance of a radiative substrate heater that operates under vacuum in a highly oxidizing environment is described. Using this heater, substrate temperatures exceeding 1050 °C are readily achieved. These are the highest temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::09f288d038a3e8f8283456af61daef67
https://doi.org/10.1063/1.1148156

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Thermodynamic stability of binary oxides in contact with silicon

Autor: K. J. Hubbard, Darrell G. Schlom

Publikováno v: Journal of Materials Research. 11:2757-2776

Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::578c0c3bfbcdc456df97b5e6040c88cd
https://doi.org/10.1557/jmr.1996.0350

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Short communication: The effect of feeding high protein distillers dried grains on milk production of Holstein cows

Autor: M. L. Gibson, K. J. Hubbard, J. M. Kelzer, K. Karges, A. M. Gehman, Paul J. Kononoff

Publikováno v: Journal of dairy science. 92(6)

The objectives of this study were to evaluate the effects of feeding high-protein distillers dried grains (HPDDG) on rumen degradability, dry matter intake, milk production, and milk composition. Sixteen lactating Holstein cows (12 multiparous and 4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6da697c7dee50fbddfc94e034464f09
https://pubmed.ncbi.nlm.nih.gov/19448023

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High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets

Autor: P. H. Tan, K. J. Hubbard, C.A. Billman, S. Völk, Darrell G. Schlom, R.R.M. Held, J. Lettieri, J. H. Haeni

Publikováno v: Thin Films and Heterostructures for Oxide Electronics ISBN: 9780387258027

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::767447060cdfb9ab373971eafc86bb70
https://doi.org/10.1007/0-387-26089-7_2

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Alternate Gate Oxides for Silicon Mosfets Using High-k Dielectrics

Autor: K. J. Hubbard, P. H. Tan, Darrell G. Schlom, C.A. Billman

Publikováno v: MRS Proceedings. 567

High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01a97a2da57bb42980765191e96ecf61
https://doi.org/10.1557/proc-567-409

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Thermodynamic Stability of Binary Oxides in Contact with Silicon

Autor: K. J. Hubbard, D. G. Schloma

Publikováno v: MRS Proceedings. 401

Using tabulated thermodynamic data, a comprehensive investigation of the thermodynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving te

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46ef367a210ea92fb1758472bf7cab66
https://doi.org/10.1557/proc-401-33

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