Zobrazeno 1 - 10
of 452
pro vyhledávání: '"K. J. Hubbard"'
Publikováno v:
Review of Scientific Instruments. 68:2538-2541
The design and performance of a radiative substrate heater that operates under vacuum in a highly oxidizing environment is described. Using this heater, substrate temperatures exceeding 1050 °C are readily achieved. These are the highest temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f288d038a3e8f8283456af61daef67
https://doi.org/10.1063/1.1148156
https://doi.org/10.1063/1.1148156
Autor:
K. J. Hubbard, Darrell G. Schlom
Publikováno v:
Journal of Materials Research. 11:2757-2776
Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578c0c3bfbcdc456df97b5e6040c88cd
https://doi.org/10.1557/jmr.1996.0350
https://doi.org/10.1557/jmr.1996.0350
Publikováno v:
Journal of dairy science. 92(6)
The objectives of this study were to evaluate the effects of feeding high-protein distillers dried grains (HPDDG) on rumen degradability, dry matter intake, milk production, and milk composition. Sixteen lactating Holstein cows (12 multiparous and 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6da697c7dee50fbddfc94e034464f09
https://pubmed.ncbi.nlm.nih.gov/19448023
https://pubmed.ncbi.nlm.nih.gov/19448023
Autor:
P. H. Tan, K. J. Hubbard, C.A. Billman, S. Völk, Darrell G. Schlom, R.R.M. Held, J. Lettieri, J. H. Haeni
Publikováno v:
Thin Films and Heterostructures for Oxide Electronics ISBN: 9780387258027
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767447060cdfb9ab373971eafc86bb70
https://doi.org/10.1007/0-387-26089-7_2
https://doi.org/10.1007/0-387-26089-7_2
Publikováno v:
MRS Proceedings. 567
High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a97a2da57bb42980765191e96ecf61
https://doi.org/10.1557/proc-567-409
https://doi.org/10.1557/proc-567-409
Autor:
K. J. Hubbard, D. G. Schloma
Publikováno v:
MRS Proceedings. 401
Using tabulated thermodynamic data, a comprehensive investigation of the thermodynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46ef367a210ea92fb1758472bf7cab66
https://doi.org/10.1557/proc-401-33
https://doi.org/10.1557/proc-401-33
Autor:
Datsenko, O. I.1 oleksandr.datsenko@knu.ua, Kravchenko, V. M.1 kravm@knu.ua, Golovynskyi, S.2 serge@szu.edu.cn
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2024, Vol. 27 Issue 2, p194-207. 14p.
Autor:
Jaszewski, Samantha T., Fields, Shelby S., Calderon, Sebastian, Aronson, Benjamin L., Beechem, Thomas E., Kelley, Kyle P., Zhang, Casey, Lenox, Megan K., Brummel, Ian A., Dickey, Elizabeth C., Ihlefeld, Jon F.
Publikováno v:
Advanced Electronic Materials; Nov2024, Vol. 10 Issue 11, p1-9, 9p
Publikováno v:
Gerontology & Geriatrics Education; Oct-Dec2024, Vol. 45 Issue 4, p505-514, 10p
Publikováno v:
Journal of Applied Physics; 4/14/2023, Vol. 133 Issue 14, p1-9, 9p