Zobrazeno 1 - 10
of 66
pro vyhledávání: '"K. Isoird"'
Autor:
Frédéric Morancho, Evgueniy Stefanov, Y. Weber, L. Theolier, K. Isoird, Jean-Michel Reynes, H. Tranduc, J. Roig
Publikováno v:
Microelectronics Journal
Microelectronics Journal, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
Microelectronics Journal, Elsevier, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
Microelectronics Journal, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
Microelectronics Journal, Elsevier, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
International audience; In this paper, the switching performance of 65V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ae158bce19d4be0e7f8412857c49731
https://doi.org/10.1016/j.mejo.2007.11.009
https://doi.org/10.1016/j.mejo.2007.11.009
Akademický článek
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Publikováno v:
Microsystem Technologies
Microsystem Technologies, Springer Verlag, 2009, 15 (9), pp.1395-1400. ⟨10.1007/s00542-009-0894-2⟩
Microsystem Technologies, 2009, 15 (9), pp.1395-1400. ⟨10.1007/s00542-009-0894-2⟩
Microsystem Technologies, Springer Verlag, 2009, 15 (9), pp.1395-1400. ⟨10.1007/s00542-009-0894-2⟩
Microsystem Technologies, 2009, 15 (9), pp.1395-1400. ⟨10.1007/s00542-009-0894-2⟩
International audience; A process for deep trench filling by BenzoCycloButene (BCB) polymer is explored. Deep trenches with 100-μm depth and different aspect ratios from 1.4 to 20 have been successfully filled by BCB. Besides, chemical mechanical po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adb737a364384a5e4c2a526bfd293c52
https://hal.archives-ouvertes.fr/hal-00991599
https://hal.archives-ouvertes.fr/hal-00991599
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
IEEE Electron Device Letters, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
IEEE Electron Device Letters, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
International audience; A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::921c62b342d7a6c017e8acb6801fd7ee
https://hal.archives-ouvertes.fr/hal-00991660
https://hal.archives-ouvertes.fr/hal-00991660
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
In this work, a new design of high voltage (1200 Volts range) power superjunction MOSFET (SJMOSFET) is presented: the deep trench SJMOSFET (DT-SJMOSFET). Besides, a new junction termination, consisting in a 70 mum width and 100 mum depth trench fille
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52bf5bab7834cec6362f23f344811132
https://doi.org/10.1109/ispsd.2008.4538959
https://doi.org/10.1109/ispsd.2008.4538959
Autor:
Pascal Dubreuil, K. Isoird, N. Mauran, L. Bary, A. Benazzi, J.P. Laur, Magali Brunet, J.-L. Sanchez
Publikováno v:
2007 European Conference on Power Electronics and Applications.
The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper focuses on integrated 3D capacitors with high capacitance density fabricated with microfabrication technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c12e3fe853579fbcf9e3428ddf9ebf
https://doi.org/10.1109/epe.2007.4417614
https://doi.org/10.1109/epe.2007.4417614
Autor:
L. Theolier, K. Isoird, H. Mahfoz-Kotb, Pascal Dubreuil, J. Roig, Frédéric Morancho, Magali Brunet
Publikováno v:
2007 European Conference on Power Electronics and Applications.
In this work we studied some possible high voltage MOSFETs structures that can replace the IGBT in the railway traction converters. In this purpose, some high voltage power MOS structures are presented and theoretically compared using 2D simulations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f4c9fdef265a9613027d180b59e496
https://doi.org/10.1109/epe.2007.4417583
https://doi.org/10.1109/epe.2007.4417583
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
B. Beydoun, Stéphane Alves, K. Isoird, I. Deram, Jean-Michel Reynes, Joel Margheritta, F. Morancho
Publikováno v:
IEE Proceedings - Circuits, Devices and Systems. 153:53
The present 14V automotive electrical system will soon become 42V. For these future automotive applications, development of 80V power MOSFETs exhibiting low on-resistance is desired. The 'FLoating Island' MOSFET (FLIMOSFET) is one of the new candidat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f67f0902d56477640c627fb35a17da7c
https://doi.org/10.1049/ip-cds:20050048
https://doi.org/10.1049/ip-cds:20050048
Publikováno v:
Microsystem Technologies; Sep2009, Vol. 15 Issue 9, p1395-1400, 6p