Zobrazeno 1 - 10
of 21
pro vyhledávání: '"K. I. Kirov"'
Publikováno v:
Thin Solid Films. 75:37-46
A comparative study of MOS structures metallized in planar and cylindrical magnetron systems and in a conventional d.c. diode sputtering system was conducted. In all cases the influence of the discharge led to distortion and hysteresis in high freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b542ff42118e68a1a9379bb705da1b
https://doi.org/10.1016/0040-6090(81)90390-4
https://doi.org/10.1016/0040-6090(81)90390-4
Autor:
Krassimir B. Radev, K. I. Kirov
Publikováno v:
Physica Status Solidi (a). 63:711-716
A charge-based DLTS technique is proposed for characterizing the interface states and, with some restrictions, the bulk traps in MIS, p–n, and Schottky-barrier diodes. The technique uses very simple devices — a mechanical chopper and a standard e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa48f0c970696efce8ba51f8ea3b2a10
https://doi.org/10.1002/pssa.2210630241
https://doi.org/10.1002/pssa.2210630241
Publikováno v:
Thin Solid Films. 81:201-206
A1N films were deposited onto silicon substrates in d.c. planar magnetron system by means of reactive sputtering of aluminium in an atmosphere of nitrogen. The influence of the deposition conditions and of post-deposition annealing on the properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d401901b4a31975c30bf57fe0273272
https://doi.org/10.1016/0040-6090(81)90482-x
https://doi.org/10.1016/0040-6090(81)90482-x
Publikováno v:
Radiation Effects. 62:1-5
The variation of the fixed oxide charge and the surface state densiy concentration are investigated in MOS structures under γ-irradiation from a 60Co source. SiO2 in the studied samples was obtained in a planar plasma reactor at low temperature (300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a4f40b01b820bdfef72bc1d6dd1bfe
https://doi.org/10.1080/00337578208235404
https://doi.org/10.1080/00337578208235404
Publikováno v:
Physica Status Solidi (a). 63:743-749
RHEED and TEM of surface replicas are used to study the crystallization processes taking place after ion implantation with silicon ions and subsequent temperature annealing of amorphous silicon layers deposited on {111} silicon substrates through spu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33471690117612c5d5f265810c1425d6
https://doi.org/10.1002/pssa.2210630245
https://doi.org/10.1002/pssa.2210630245
Publikováno v:
Physica Status Solidi (a). 59:853-859
The morphology of single crystal silicon and SiO2 surfaces etched in CF4 or CF4 + 5% O2 plasma as well as properties of MOS structures obtained by thermal oxidation of plasma etched Si are studied. The etched surfaces are rough and the shape and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39607d7ba2c65c5202695834225601f2
https://doi.org/10.1002/pssa.2210590253
https://doi.org/10.1002/pssa.2210590253
Autor:
S. Alexandrova, K. I. Kirov
Publikováno v:
Physica Status Solidi (a). 49:781-788
Different sources of error are discussed for the case of the use of a static technique to determine the interface state density in MOS systems. A direct Q–U analysis is recommended in order to eliminate the error when numerical differentiation is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44dadd0d3753c082596bffe6f3db57d4
https://doi.org/10.1002/pssa.2210490244
https://doi.org/10.1002/pssa.2210490244
Publikováno v:
Physica Status Solidi (a). 63:371-374
Stripping of different types of photoresist in O2 plasma in a planar reactor is investigated. Data are presented on the dependence of the stripping rate on the O2 pressure, temperature, and power density. Also, contamination by residues from the phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9df8d6f87e1bf54f0e84107a8f0ee0c
https://doi.org/10.1002/pssa.2210630148
https://doi.org/10.1002/pssa.2210630148
Publikováno v:
Physica Status Solidi (a). 48:609-614
SiO2 layers on Si substrates are obtained in planar reactor by decomposition of tetra-ethoxy silane in oxygen plasma. The layers deposited at substrate temperature of 300 °C show some porosity, hygroscopicity, increased etching rate, and water incor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5331799f476c7915c82f9c22a6ef4da
https://doi.org/10.1002/pssa.2210480243
https://doi.org/10.1002/pssa.2210480243
Publikováno v:
Physica Status Solidi (a). 62:727-736
The radiation damage in a Si-SiO2 system exposed to O2 plasma in a planar reactor is investigated in dependence on the exposure time, the substrate temperature, and the pressure of O2. Capacitance-voltage (C-U) techniques and a static method are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2a5e45a782bdfc77c3393ac392d3b1c
https://doi.org/10.1002/pssa.2210620247
https://doi.org/10.1002/pssa.2210620247