Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

Autor: L Nicolaï, J-M Mariot, U Djukic, W Wang, O Heckmann, M C Richter, J Kanski, M Leandersson, T Balasubramanian, J Sadowski, J Braun, H Ebert, I Vobornik, J Fujii, J Minár, K Hricovini

Publikováno v: New Journal of Physics, Vol 21, Iss 12, p 123012 (2019)

The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. Th

Externí odkaz: https://doaj.org/article/f59bcf6e11da4d389d18f599a43c5525

Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments

Autor: Laurent Nicolaï, J.-M. Mariot, Jan Minár, O. Heckmann, M.C. Richter, K. Hricovini

Publikováno v: Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter, IOP Publishing, 2019, 31 (28), pp.283001. ⟨10.1088/1361-648X/ab1529⟩
Journal of Physics: Condensed Matter, 2019, 31 (28), pp.283001. ⟨10.1088/1361-648X/ab1529⟩

International audience; The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89dd72977dfb6cc58e313657e3c2e545
https://hal.sorbonne-universite.fr/hal-02182365/document

Study and characterization of SrTiO3 surface

Autor: Pavol Šutta, Rostislav Medlín, K. Hricovini, Fatima Alarab, Christine Richter, Jan Minár, Lucie Prušáková, O. Heckmann

The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::351ac311cdab008553ebbc5f446ba2eb
http://arxiv.org/abs/1807.00150

Structural properties of two-dimensional MoS2 synthesized by CVD technique on Al2O3 (0001)

Autor: P. V. Vinokurov, K. Hricovini, Yu. M. Grigor’ev, A. A. Semenova, E. I. Zakharkina, E. F. Boiakinov

Publikováno v: AIP Conference Proceedings.

In this work, chemical vapor deposition (CVD) is performed for the synthesis of MoS2 films on SiO2 and epi-grade sapphire with 0001 orientation substrates. Structural properties of obtained samples are examined by means of Atomic Force Microscopy (AF

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::633d861b6978c080826969cdef0f9757
https://doi.org/10.1063/1.5079361

Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface

Autor: J.-M. Mariot, Christian Schneider, Ivana Vobornik, Vitaliy Feyer, K. Hricovini, Uros Djukic, Nicholas Barrett, W. Ndiaye, O. Heckmann, Jun Fujii, M. C. Richter, M.A. Gafoor, L. Nicolaï

Publikováno v: Surface Science
Surface Science, Elsevier, 2016, 651, pp.147-153. ⟨10.1016/j.susc.2016.03.032⟩
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2016, 651, pp.147-153. ⟨10.1016/j.susc.2016.03.032⟩
Surface science 651 (2016): 147–153. doi:10.1016/j.susc.2016.03.032
info:cnr-pdr/source/autori:Richter, M. C.; Mariot, J-M.; Gafoor, M. A.; Nicolai, L.; Heckmann, O.; Djukic, U.; Ndiaye, W.; Vobornik, I.; Fujii, J.; Barrett, N.; Feyer, V.; Schneider, C. M.; Hricovini, K./titolo:Bi atoms mobility-driven circular domains at the Bi%2FInAs(111) interface/doi:10.1016%2Fj.susc.2016.03.032/rivista:Surface science/anno:2016/pagina_da:147/pagina_a:153/intervallo_pagine:147–153/volume:651

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7ce073c2273a5e8fa21ed34a6885c73
https://hal-cea.archives-ouvertes.fr/cea-01481529/document