Zobrazeno 1 - 10
of 27
pro vyhledávání: '"K. Hirche"'
Publikováno v:
IEEE Transactions on Nuclear Science. 60:2525-2529
Heavy ion irradiation testing was performed on AlGaN/GaN High Electron Mobility Transistors (HEMTs), both under DC and RF operation. Single gate finger radiation test structures and multiple gate finger RF power cells were tested and failure mechanis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32e9bfde1da199730e636fe75182bc9
https://doi.org/10.1109/tns.2013.2247774
https://doi.org/10.1109/tns.2013.2247774
Autor:
Joachim Würfl, Wolfgang Heinrich, Reza Behtash, Ralf Doerner, Günther Tränkle, Matthias Rudolph, K. Hirche
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:37-43
This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa28be68bd685cb9bfca82c1c6082a4
https://doi.org/10.1109/tmtt.2006.886907
https://doi.org/10.1109/tmtt.2006.886907
Autor:
Wolfgang Heinrich, K. Hirche, Günther Tränkle, Matthias Rudolph, Nidhi Chaturvedi, Joachim Würfl
Publikováno v:
IEEE Microwave and Wireless Components Letters. 19:251-253
GaN low-noise amplifiers (LNAs) operating at 27-31 GHz are presented in this letter. The monolithically integrated LNAs were fabricated using the process line of the Ferdinand-Braun-Institut. Noise figures of 3.7 to 3.9 dB were measured. The ruggedne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69dff1236eae874f5c1fd63c3caebe57
https://doi.org/10.1109/lmwc.2009.2015514
https://doi.org/10.1109/lmwc.2009.2015514
Autor:
Peter Brückner, Oliver Ambacher, K. Hirche, Jutta Kuhn, P. Jukkala, Patrick Waltereit, Rudiger Quay, M. van Heijningen
Publikováno v:
Proceedings IEEE International Microwave Symposium, IMS 2013, 2-7 June 2013, Seattle, WA, USA
This paper reports on two AlGaN/GaN MMIC technologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa696e52763572c558729e50cfa7adc5
http://resolver.tudelft.nl/uuid:afaa9a0a-208a-4f8c-86b2-720811d3691b
http://resolver.tudelft.nl/uuid:afaa9a0a-208a-4f8c-86b2-720811d3691b
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
Waveguide-to-microstrip transitions are essential elements for mm-wave transmitters and receivers. This paper presents an optimized transition with a relatively simple geometry and a minimum of compensation structures in order to mitigate sensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc867ddade68c4a0e195f72da74dc79c
https://doi.org/10.1109/mwsym.2007.380338
https://doi.org/10.1109/mwsym.2007.380338
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
A highly rugged low-noise GaN MMIC amplifier is presented that operates in the frequency band 3-7 GHz. A noise figure NF below 2.3 dB is measured from 3.5 to 7 GHz, with NF < 1.8 dB between 5 and 7 GHz. The survivability of the LNA was assessed by se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45296f6a6a1b93ebb2bcc03a40a8689f
https://doi.org/10.1109/mwsym.2006.249786
https://doi.org/10.1109/mwsym.2006.249786
Autor:
N. Bürger, M. Korn, T. Schwander, P. König, M. Anhegger, K. Panzlaff, T. Feifel, A. Hangleiter, M. Warth, S. Schröter, K. Hirche
Publikováno v:
Applied Physics Letters. 70:2855-2857
Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47As quantum wells with Al0.48In0.52As barriers. This behavior seems to be specific for the AlGaInAs material sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27647a4d72074fe184f94bb61ef78761
https://doi.org/10.1063/1.119023
https://doi.org/10.1063/1.119023
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
In recent years the development of InAlAs/InGaAs-HFETs has advanced considerably, enabling maximum transconductances and cut-off frequencies to be realized. The HFET is therefore a highly attractive component for use in integrated circuits, e.g. low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c09d1d20419fc4e8aefd415eed8b12e
https://doi.org/10.1109/iciprm.1996.492336
https://doi.org/10.1109/iciprm.1996.492336
Publikováno v:
2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).
Flip-chip interconnects with 80 /spl mu/m bumps are optimized for 38 GHz by means of electromagnetic simulation. Thin-film microstrip is used as transmission-line on the carrier substrate. A compensation structure reduces reflections at the interconn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57f129faf8535183cf1a34cc83e0daf9
https://doi.org/10.1109/mwsym.2000.860887
https://doi.org/10.1109/mwsym.2000.860887
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.