Zobrazeno 1 - 10
of 20
pro vyhledávání: '"K. Hasnat"'
Publikováno v:
Advances in Materials Science. 20:81-94
Perovskite is able to sequester simultaneously, in its structure, both actinides and alkaline-earth elements. This study is an attempt to synthesize a complex perovskite Ca0.91-xCe0.09Rb0.04Csx[(Zr0.50Ti0.45)Al0.05]O3 (0.2≤x≤0.4), doped in the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1facaafee99c382e50680541af453db9
https://doi.org/10.2478/adms-2020-0012
https://doi.org/10.2478/adms-2020-0012
Autor:
S M, Haque, N, Jahan, M A, Mannan, M, Hasan, M, Begum, S, Rob, M, Akhter, S, Yasmin, S K, Hasnat
Publikováno v:
Mymensingh medical journal : MMJ. 23(4)
A cross-sectional descriptive study was conducted in the Neonatal Intensive Care Unit (NICU) of Ad-din Medical College Hospital during the period of January to December 2011 to determine the pattern of bacterial agents causing neonatal sepsis and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b8bd11406ba6c59baa6d1cc8f3c8ef44
https://pubmed.ncbi.nlm.nih.gov/25481589
https://pubmed.ncbi.nlm.nih.gov/25481589
Autor:
C.M. Maziar, S. Jallepalli, K. Hasnat, Al F. Tasch, Shyam Krishnamurthy, Choh-Fei Yeap, S.A. Hareland
Publikováno v:
IEEE Transactions on Electron Devices. 43:90-96
Successful scaling of MOS device feature size requires thinner gate oxides and higher levels of channel doping in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. However, in deep submicron (/spl les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de87991b9d6368018300dc61f25f4d87
https://doi.org/10.1109/16.477597
https://doi.org/10.1109/16.477597
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:53-59
Fundamental to successful manufacturing of integrated circuits is the achievement of sufficient control in all process steps to realize, with very high yield, fully functional circuits whose performance and reliability conform to pre-determined stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f9f105ef91fbb17754c655abf40ecb7
https://doi.org/10.1109/66.286828
https://doi.org/10.1109/66.286828
Autor:
A.F. Tasch, S. Jallepalli, Choh-Fei Yeap, V.M. Agostinelli, K. Hasnat, T.J. Bordelon, C.M. Maziar, X.L. Wang
Publikováno v:
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.
Substrate current model based on the post-processing 1-D hydrodynamic model attached to drift-diffusion simulators has proven to be efficient and accurate for predicting substrate current for contemporary submicron MOSFETs. However, as devices shrink
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03193f642240f5e746ce11004c84c4bb
https://doi.org/10.1109/nupad.1994.343501
https://doi.org/10.1109/nupad.1994.343501
Publikováno v:
Proceedings of the Eleventh Biennial University/Government/ Industry Microelectronics Symposium.
With the increasing complexity of submicron device phenomena, efficient and accurate device simulators are indispensable. Carrier mobility is one of the most important parameters required to accurately predict MOSFET terminal characteristics. Numerou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10824171e82a6f902cce24fee283471e
https://doi.org/10.1109/ugim.1995.514142
https://doi.org/10.1109/ugim.1995.514142
Publikováno v:
Circulation. 100
Background —Homograft valves offer many advantages; however, there is concern about their use in second aortic valve replacement because of the complexity of the procedure and the possibility of accelerated degeneration. Methods and Results —One
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e16c297c14810a9fb79c0e6422b17d
https://doi.org/10.1161/circ.100.suppl_2.ii-42
https://doi.org/10.1161/circ.100.suppl_2.ii-42
Akademický článek
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Autor:
Jimmy K.F. Hon, J. Liddicoat, K. Hasnat, Magdi H. Yacoub, Emma J. Birks, S. Glennon, Sue Edwards
Publikováno v:
Circulation. 100:II-42
Homograft valves offer many advantages; however, there is concern about their use in second aortic valve replacement because of the complexity of the procedure and the possibility of accelerated degeneration.One hundred and forty-four patients underw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56fc2c32876a61b828b1aa01a53bc4e4
https://doi.org/10.1161/01.cir.100.suppl_2.ii-42
https://doi.org/10.1161/01.cir.100.suppl_2.ii-42
Conference
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