Zobrazeno 1 - 10
of 18
pro vyhledávání: '"K. Hamaida"'
Autor:
M. Ghaffour, A. Abdellaoui, Z. Lounis, K. Hamaida, A. Ouerdane, M. Bouslama, Yves Monteil, N. Berrouachedi, C. Jardin
Publikováno v:
Applied Surface Science. 256:21-26
In this study, the EELS results revealed the great sensitivity of InP compound submitted to Ar + or N + ions at low energy. The preliminary treatment of InP by the Ar + ions was useful as part of the cleaning process of the surface. Further argon ion
Autor:
M. Bouslama, N. Berrouachedi, Yves Monteil, A. Ouerdane, Z. Lounis, M. Ghaffour, A. Abdellaoui, A. Ouhaibi, K. Hamaida
Publikováno v:
Applied Surface Science. 254:7394-7400
The goal of this research is to highlight the effectiveness of associating the spectroscopic methods EELS and EPES in the study of thin film grown on substrates. We use the great sensitivity of the Electron Energy Loss Spectroscopy (EELS) and the Ela
Autor:
K. Hamaida, Z. Lounis, M. Ghaffour, A. Ouerdane, M. Bouslama, A. Abdellaoui, N. Berrouachedi, Yves Monteil
Publikováno v:
Applied Surface Science. 254:4024-4028
The interaction of ions with matter plays an important role in the treatment of material surfaces. In this paper we study the effect of argon ion bombardment on the InSb surface in comparison with the InP one. The Ar+ ions, accelerated at low energy
Publikováno v:
2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV).
Autor:
K. Hamaida, A. Ouerdane, A. Abdellaoui, M. Ghaffour, Michel Gendry, F. Besahraoui, Z. Chelahi-Chikr, M. Bouslama
Publikováno v:
Surface Review and Letters
Surface Review and Letters, World Scientific Publishing, 2012, 19 (06), pp.1250066. ⟨10.1142/S0218625X12500667⟩
Surface Review and Letters, World Scientific Publishing, 2012, 19 (06), pp.1250066. ⟨10.1142/S0218625X12500667⟩
Recently, the development of indium oxide such as In2O3 on the III–V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxide In2O3 attracted considerable
Autor:
A. Abdellaoui, Z. Lounis, N. Berrouachedi, M. Ghaffour, M. Bouslama, K. Hamaida, C. Jardin, A. Ouerdane
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 28:012022
We give the great interest to characterise the InP and InPO4/InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces
Autor:
M. Bouslama, Y Monteuil, K. Hamaida, M. Ghaffour, Abdelkader Nouri, A. Ouerdane, A. Abdellaoui
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 28:012024
At low energy (300 eV), the Ar+ ions bombardment lead to the formation of small nanodots on the InP and the InSb surface compounds. We used the Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) to detect the presence of t
Autor:
K. HAMAIDA, M. BOUSLAMA, M. GHAFFOUR, F. BESAHRAOUI, Z. CHELAHI-CHIKR, A. OUERDANE, A. ABDELLAOUI, M. GENDRY
Publikováno v:
Surface Review and Letters. 19(06):1250066-1
Recently, the development of indium oxide such as In2O3 on the III–V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxide In2O3 attracted considerable
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Akademický článek
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