Zobrazeno 1 - 10
of 13
pro vyhledávání: '"K. H. Prykhodko"'
Autor:
O. V. Botsula, K. H. Prykhodko
Publikováno v:
Вісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка, Iss 26 (2018)
Externí odkaz:
https://doaj.org/article/6dc973fba72e4403b75f559a91d802c2
Publikováno v:
34. :19-28
Background. The unique spectral position of terahertz range determines the difficulties of developing compact solid-state sources of terahertz radiation. In most cases, the operating frequencies of existing devices are displaced in the terahertz part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5db8be854ea778c4bea101b31f7a20c
https://doi.org/10.26565/2311-0872-2021-34-03
https://doi.org/10.26565/2311-0872-2021-34-03
Publikováno v:
2021 IEEE 3rd Ukraine Conference on Electrical and Computer Engineering (UKRCON).
Graded band diode structures for generation in long wave part of terahertz range are proposed. Low intensive impact ionization is used as a way to improve of frequency properties of transfer electron devices (TED). InzGa1-zAs-based graded band struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4506a83ec89629dc6212cdc3d142901f
https://doi.org/10.1109/ukrcon53503.2021.9575748
https://doi.org/10.1109/ukrcon53503.2021.9575748
Autor:
K. H. Prykhodko, O. V. Botsula
Publikováno v:
2020 IEEE Ukrainian Microwave Week (UkrMW).
The subterahertz (sub-THz) noise signals were used for spectroscopy, tomographic imaging and other useful applications, The InGaN-based graded gap heterostructure diodes are proposed as a noise sources in the sub-THz and THz region. Operation princip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf150f93f973adf1a920fd51b916cbe
https://doi.org/10.1109/ukrmw49653.2020.9252763
https://doi.org/10.1109/ukrmw49653.2020.9252763
Autor:
K. H. Prykhodko, O. V. Botsula
Publikováno v:
2020 IEEE Ukrainian Microwave Week (UkrMW).
Usage of subterahertz (sub-THz) and terahertz (THz) noise signals is widely applied to tomographic imaging, spectroscopy, calibration of radiometers, etc. The heterostructure diodes operation under impact ionization mode is considered as potential ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b261cfefe4c5a36a97382eb83ba2a93
https://doi.org/10.1109/ukrmw49653.2020.9252772
https://doi.org/10.1109/ukrmw49653.2020.9252772
Autor:
K. H. Prykhodko, O. V. Botsula
Publikováno v:
Telecommunications and Radio Engineering. 76:891-901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2969b838a472371f67b138379cc3b0c3
https://doi.org/10.1615/telecomradeng.v76.i10.60
https://doi.org/10.1615/telecomradeng.v76.i10.60
Publikováno v:
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON).
Diodes with lateral $n^{+}-n$-border have been proposed as wide-band and high frequency active elements in long part of the terahertz range. They represent planar two-terminal $n^{+}-n-n^{+}-$GaAs-based structures containing a lateral active border a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27f638217fa7b3883f39b75cdc4471d
https://doi.org/10.1109/ukrcon.2019.8879884
https://doi.org/10.1109/ukrcon.2019.8879884
Publikováno v:
2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS).
Diodes with resonant tunneling border (RTB) are studied as possible high speed and wide-band devices. The diodes represent planar two-terminal n+-n-n+-GaAs-based structures containing the lateral active border as a AlGaAs/GaAs double barrier resonant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee3a1a824d161eae335e9eaaf11e731
https://doi.org/10.1109/uwbusis.2018.8520067
https://doi.org/10.1109/uwbusis.2018.8520067
Autor:
O. V. Botsula, K. H. Prykhodko
Publikováno v:
2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS).
The noise signal sources at subterahertz(sub-THz) and terahertz(THz) region are useful in many applications such as tomographic imaging, spectroscopy, radars and other. The GaInAs-based diodes for noise generation in the sub-THz and THz region are pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::440c4844ae546a2fae28087f4fa58520
https://doi.org/10.1109/uwbusis.2018.8520183
https://doi.org/10.1109/uwbusis.2018.8520183
Publikováno v:
2017 IEEE International Young Scientists Forum on Applied Physics and Engineering (YSF).
The short length and graded gap of InGaAs-based diodes with impact ionization are considered. Diode peculiarity is defined by usage region with varying composition. The analysis of diodes operation is performed by Monte Carlo technique. Influence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba73b2f03aeda4ddf83b71deb87d41af
https://doi.org/10.1109/ysf.2017.8126637
https://doi.org/10.1109/ysf.2017.8126637