Zobrazeno 1 - 10
of 71
pro vyhledávání: '"K. H. Pantke"'
Autor:
Frédéric Pellas, Jan Bernheim, K. H. Pantke, François Damas, Serge Goldman, Marie Faymonville, P Van Eeckhout, Caroline Schnakers, Gustave Moonen, Steven Laureys, Marie-Aurélie Bruno
Publikováno v:
Revue Neurologique. 164:322-335
Resume Introduction Le Locked-In Syndrome (LIS) est defini par : (i) la presence d’une ouverture continue des paupieres ; (ii) des capacites cognitives relativement intactes ; (iii) une aphonie ou hypophonie severe ; (iv) une quadriplegie ou quadri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e1f6e9d7dcde992c4c441772e7bc308
https://doi.org/10.1016/j.neurol.2007.12.010
https://doi.org/10.1016/j.neurol.2007.12.010
Autor:
Bernard Lambermont, Jacques Berré, Martine Ferring, Gustave Moonen, Pierre Damas, André Luxen, X. De Tiège, Steven Laureys, Serge Goldman, Bernard Sadzot, G. Franck, Marie-Elisabeth Faymonville, Pierre Maquet, P. Van Bogaert, Maurice Lamy, K. H. Pantke, Nicolas Mavroudakis
Publikováno v:
Der Anaesthesist. 53:1195-1202
Comatose, vegetative, minimally conscious or locked-in patients represent a problem in terms of diagnosis, prognosis, treatment and everyday management at the intensive care unit. The evaluation of possible cognitive functions in these patients is di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168afc29eaffbd1a9a38e05d70a832e3
https://doi.org/10.1007/s00101-004-0747-4
https://doi.org/10.1007/s00101-004-0747-4
Publikováno v:
Birkedal, D, Vadim, L, Pantke, K-H, Østergaard, J E & Hvam, J M 1995, ' Nanoroughness localization of excitons in GaAs multiple quantum wells studied by transient four-wave mixing ', Physical Review B, vol. 51, no. 12, pp. 7977-7980 . https://doi.org/10.1103/PhysRevB.51.7977
The interface roughness on a nanometer scale plays a decisive role in dephasing of excitons in GaAs multiple quantum wells. The excitonic four-wave mixing signal shows a free polarization decay and a corresponding homogeneously broadened line from ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a999248b717c02187aa989ebb1150bc6
https://doi.org/10.1103/physrevb.51.7977
https://doi.org/10.1103/physrevb.51.7977
Publikováno v:
physica status solidi (b). 188:435-445
The polarization and population dynamics of resonantly generated excitons in GaAs/AlGaAs quantum well structures are investigated using transient three-pulse four-wave mixing. The decay dynamics show strongly nonexponential behavior for both variatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca27f3a9e7c7546b62c38abb0e7046b
https://doi.org/10.1002/pssb.2221880141
https://doi.org/10.1002/pssb.2221880141
Publikováno v:
physica status solidi (b). 188:465-472
The influence of inhomogeneous broadening on results obtained from spectrally resolved transient four-wave mixing in semiconductors is studied and the homogeneous and inhomogeneous linewidths are simultaneously deduced. Experimental results obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713bafcd7cecabfed510fb6c954db1f6
https://doi.org/10.1002/pssb.2221880144
https://doi.org/10.1002/pssb.2221880144
Publikováno v:
Solid State Communications. 93:65-70
Biexcitons localized at neutral acceptor sites in the direct-gap II–VI semiconductors CdS and CdSe are identified with different spectroscopic techniques such as photoluminescence, two-photon absorption and nonlinear quantum beat spectroscopy (NQBS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21adc2ff5e9b982f9c5b11f6f02c8bfd
https://doi.org/10.1016/0038-1098(94)00543-5
https://doi.org/10.1016/0038-1098(94)00543-5
Publikováno v:
Erland, J, Pantke, K-H, Mizeikis, V, Vadim, L & Hvam, J M 1994, ' Spectrally resolved four-wave mixing in semiconductors: Influence of inhomogeneous broadening ', Physical Review B, vol. 50, no. 20, pp. 15047-15055 . https://doi.org/10.1103/PhysRevB.50.15047
We study the influence of inhomogeneous broadening on results obtained from spectrally resolved transient four-wave mixing. In particular, we study the case where more resonances are coherently excited, leading to polarization interference or quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c364eea969f101f051342598cffd24d3
https://doi.org/10.1103/physrevb.50.15047
https://doi.org/10.1103/physrevb.50.15047
Publikováno v:
Journal of Crystal Growth. 138:800-804
With the technique of nonlinear quantum beat spectroscopy (NQBS), based on time-integrated, spectrally resolved four-wave mixing, the nonlinearities of biexcitons localized at neutral acceptor sites in CdSe are investigated. The NQBS offers the possi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159b948c65787da9a9963dc272a82efc
https://doi.org/10.1016/0022-0248(94)90910-5
https://doi.org/10.1016/0022-0248(94)90910-5
Autor:
K.-H. Pantke, Jørn Märcher Hvam
Publikováno v:
International Journal of Modern Physics B. :73-120
We review quantum beats from extended electronic states in bulk semiconductors and multiple quantum well structures obtained by nonlinear spectroscopy. The nonlinear methods are degenerate four-wave mixing, photon echo and nonlinear transmission. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67971fe087743f34991494181faa9b6a
https://doi.org/10.1142/s021797929400004x
https://doi.org/10.1142/s021797929400004x
Publikováno v:
Physical Review B. 47:6827-6830
The diffusion and the lifetime of excitons were determined via laser-induced gratings in high-quality GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells. The diffusion is governed by the int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5127e05cb00d37b9355d826fcade359f
https://doi.org/10.1103/physrevb.47.6827
https://doi.org/10.1103/physrevb.47.6827