Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

Autor: Zhenni Yang, Xiangyu Xu, Yan Wang, Siliang Kuang, Duanyang Chen, Hongji Qi, K. H. L. Zhang

Publikováno v: Applied Physics Letters. 122

β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe4235bf766594b3c481e1680bf5e018
https://doi.org/10.1063/5.0147004

Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)

Autor: Freddy E. Oropeza, Christopher F McConville, Tim D. Veal, Russell G. Egdell, Aron Walsh, K. H. L. Zhang, Vlado K. Lazarov

Publikováno v: ResearcherID

Epitaxial films of In(2)O(3) have been grown on Y-stabilised ZrO(2)(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46b58c8716bd6699be8a650597db4918
https://ora.ox.ac.uk/objects/uuid:dd241c05-cf60-4293-8c92-a05e119729d4

Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)

Autor: Russell G. Egdell, Pdc King, K. H. L. Zhang, Christopher F McConville, Paolo Lacovig, Wei Chen, Tim D. Veal, A. T. S. Wee, David J. Payne, Vlado K. Lazarov, G. Panaccione, Robert G. Palgrave

Publikováno v: Chemistry of materials (Online) 21 (2009): 4353–4355. doi:10.1021/cm901127r
info:cnr-pdr/source/autori:Zhang, K. H. L.; Payne, D. J.; Palgrave, R. G.; Lazarov, V. K.; Chen, W.; Wee, A. T. S.; McConville, C. F.; King, P. D. C.; Veal, T. D.; Panaccione, G.; Lacovig, P.; Egdell, R. G./titolo:Surface Structure and Electronic Properties of In(2)O(3)(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO(2)(111)/doi:10.1021%2Fcm901127r/rivista:Chemistry of materials (Online)/anno:2009/pagina_da:4353/pagina_a:4355/intervallo_pagine:4353–4355/volume:21

Surface structure and electronic properties of In20 3(111) single-crystal thin films grown on V-stabilized Zr0 2(1 11) was observed. The surface geometrical structure was examined by atomic force microscopy (AFM), scanning tunneling microscope (STM)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c98534261f7297a2e5cee0b4761928c
https://ora.ox.ac.uk/objects/uuid:52503297-b754-43f1-8678-e1f0434c012b

Influence of temperature on the epitaxial growth of In2O3 thin films on Y-ZrO2(111)

Autor: R.G. Egdell, H. H.-C. Lai, Vlado K. Lazarov, K. H. L. Zhang

Publikováno v: Journal of Crystal Growth. 318:345-350

The influence of the substrate temperature on the epitaxial growth of In2O3 on Y-stabilized ZrO2(1 1 1) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range between 550 and 860 °C. In all cases the films grow with (1 1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff1f2f393b7c1f97286ebebb1c523480
https://doi.org/10.1016/j.jcrysgro.2010.10.143

Electronic and magnetic properties of epitaxial perovskite SrCrO₃(0 0 1)

Autor: K H L, Zhang, Y, Du, P V, Sushko, M E, Bowden, V, Shutthanandan, L, Qiao, G X, Cao, Z, Gai, S, Sallis, L F J, Piper, S A, Chambers

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal. 27(24)

We have investigated the intrinsic properties of SrCrO3 epitaxial thin films synthesized by molecular beam epitaxy. We find compelling evidence that SrCrO3 is a correlated metal. X-ray photoemission valence band and O K-edge x-ray absorption spectra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::e5e32a858be0cfaaced1e1199eb44a27
https://pubmed.ncbi.nlm.nih.gov/26037231