Zobrazeno 1 - 6
of 6
pro vyhledávání: '"K. H. Cirne"'
Autor:
Fernando Aguirre, K. H. Cirne, Nemitala Added, Nicolas E. Araujo, M. A. A. Melo, Nilberto H. Medina, R. B. B. Santos, M. A. G. Silveira, Felipe G. H. Leite, V. A. P. Aguiar, A. Rallo, Eduardo Luiz Augusto Macchione
Publikováno v:
AIP Conference Proceedings.
Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a64c1110602eb760004a63526c2115
https://doi.org/10.1063/1.4955374
https://doi.org/10.1063/1.4955374
Autor:
J. A. De Lima, Marcilei A. G. Silveira, Manfredo Harri Tabacniks, L. E. Seixas, M. D. L. Barbosa, Nemitala Added, Salvador Pinillos Gimenez, Waldjânio de Oliveira Melo, K. H. Cirne, R. B. B. Santos, Nilberto H. Medina
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 273:135-138
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::761bd5dc768a8be672cb2620d730d03d
https://doi.org/10.1016/j.nimb.2011.07.058
https://doi.org/10.1016/j.nimb.2011.07.058
Publikováno v:
Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
This paper introduces a high-density layout style named overlapping circular-gate transistor (O-CGT) that allows the overlapping of circular gates from neighboring cells. With reference to rectangular-gate transistors (RGTs), higher aspect ratio per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5c85b545fd1e3777d8be17d7cbb1db7
https://repositorio.fei.edu.br/handle/FEI/1300
https://repositorio.fei.edu.br/handle/FEI/1300
Publikováno v:
2011 12th European Conference on Radiation and Its Effects on Components and Systems.
IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1ba354dbc383c614c9d6c38f8d25299
https://doi.org/10.1109/radecs.2011.6131374
https://doi.org/10.1109/radecs.2011.6131374
Autor:
Nilberto H. Medina, L. E. Seixas, M. A. A. Melo, R. B. B. Santos, Felipe G. H. Leite, K H Cirne, A. Rallo, M. A. G. Silveira, F G Cunha, J A de Oliveira, Nemitala Added, V. A. P. Aguiar, Renato Giacomini
Publikováno v:
Journal of Physics: Conference Series. 630:012012
Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small detection volume, fast readout, portability, low power consumption and low radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43efa71f7e874e8254ff75e510ee00c5
https://doi.org/10.1088/1742-6596/630/1/012012
https://doi.org/10.1088/1742-6596/630/1/012012
Autor:
M A G Silveira, M A A Melo, V A P Aguiar, A Rallo, R B B Santos, N H Medina, N Added, L E Seixas Jr, F G Leite, F G Cunha, K H Cirne, R Giacomini, J A de Oliveira
Publikováno v:
Journal of Physics: Conference Series; 6/23/2015, Vol. 630 Issue 1, p1-1, 1p