Zobrazeno 1 - 10
of 30
pro vyhledávání: '"K. H. A. Bogart"'
Publikováno v:
Journal of Crystal Growth. 312:1817-1822
The thermal stability of ∼200-nm-thick InGaN thin films on GaN was investigated using isothermal and isochronal post-growth anneals. The In x Ga 1− x N films ( x =0.08–0.18) were annealed in N 2 at 600–1000 °C for 15–60 min, and the result
Autor:
Mary A. Miller, Karen Charlene Cross, Randy J. Shul, A. A. Allerman, Mary H. Crawford, Michael A. Banas, Jeffrey Stevens, K. H. A. Bogart
Publikováno v:
Journal of Electronic Materials. 38:533-537
Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in AlxGa1−xN-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included incre
Autor:
John A. Rogers, Robert K. Grubbs, Mahmoud Reda Taha, A. M. Sanchez, A. R. Ellis, Mehmet F. Su, Ihab El-Kady, D. L. Shir, K. H. A. Bogart, Christos G. Christodoulou, M. Wiwi
Publikováno v:
ECS Transactions. 16:165-171
The combination of Proximity-field nanoPatterning (PnP) and graded temperature ALD has enabled the synthesis of robust three dimensional nanostructures. The PnP process uses a simple elastomeric optical phase mask to generate a complex three dimensio
Autor:
Dong Xiao, Harley T. Johnson, Daniel Shir, Hongwei Liao, Seokwoo Jeon, Gregory R. Bogart, John A. Rogers, K. H. A. Bogart
Publikováno v:
Nano Letters. 8:2236-2244
We describe the fabrication of unusual classes of three-dimensional (3D) nanostructures using single step, two-photon exposures of photopolymers through elastomeric phase masks with 5-fold, Penrose quasicrystalline layouts. Confocal imaging, computat
Autor:
Nancy A. Missert, Joseph R. Michael, Stephen R. Lee, K. H. A. Bogart, David M. Follstaedt, Mary H. Crawford, Andrew A. Allerman
Publikováno v:
Journal of Crystal Growth. 310:766-776
Metalorganic vapor phase epitaxy was used to grow 15 μm of Al 0.26 Ga 0.74 N on GaN that was patterned with trenches 10 μm wide and 1 μm deep. The top of the AlGaN showed 4-μm-wide areas on either side of the trench centerline that had low thread
Autor:
J. Crofton, K. H. A. Bogart
Publikováno v:
Journal of Electronic Materials. 35:605-612
Calculations of specific contact resistance as a function of doping and barrier height were performed for p-type GaN. These calculations took into account two valence bands, each with different effective masses, and show that at low doping, the heavy
Autor:
David M. Follstaedt, Andrew A. Allerman, K. H. A. Bogart, Mary H. Crawford, Daniel D. Koleske, Paula P. Provencio, S. R. Lee, Arthur J. Fischer
Publikováno v:
Journal of Crystal Growth. 272:227-241
Solid-state light sources emitting at wavelengths less than 300 nm would enable technological advances in many areas such as fluorescence-based biological agent detection, non-line-of-sight communications, water purification, and industrial processin
Autor:
S. R. Lee, Qingyang Li, Mary H. Crawford, K. H. A. Bogart, Henryk Temkin, Purnendu K. Dasgupta, Arthur J. Fischer, A. A. Allerman
Publikováno v:
Applied Spectroscopy. 58:1360-1363
Dipicolinic acid (DPA, 2,6-pyridinedicarboxylic acid) is a substance uniquely present in bacterial spores such as that from anthrax ( B. anthracis). It is known that DPA can be detected by the long-lived fluorescence of its terbium chelate; the best
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:188-196
The effect of source power, bias power, chamber pressure, flow rate, and feed gas composition on profile evolution during polycrystalline silicon etching with an oxide hardmask has been studied in a transformer-coupled plasma system. The large result
Autor:
M. V. Malyshev, F. P. Klemens, J. M. Lane, K. H. A. Bogart, J. I. Colonell, Jaesik Lee, Vincent M. Donnelly
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:197-206
Nonideal feature profile anomalies such as undercut, tapered, or bowed sidewalls and microtrenches at the base of trench sidewalls are often observed after etching masked silicon (Si) in chlorine (Cl2) plasmas. Off-normal impact with subsequent scatt