Výsledky vyhledávání

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

Autor: Ewa Placzek-Popko, K. Gwozdz, Monika Ozga, R. Pietruszka, Marek Godlewski, Bartlomiej S. Witkowski

Publikováno v: Beilstein Journal of Nanotechnology, Vol 12, Iss 1, Pp 766-774 (2021)
Beilstein Journal of Nanotechnology

Today, silicon solar cells (amorphous films and wafer-based) are a main source of green energy. These cells and their components are produced by employing various technologies. Unfortunately, during the production process, chemicals that are harmful

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34755d486d1f30a0839b0fccc05e0db8
https://doi.org/10.3762/bjnano.12.60

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Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnOx heterojunctions

Autor: João Monteiro Silva, Corneliu Ghica, Koppole C. Sekhar, K. Gwozdz, E. M. F. Vieira, Luís Gonçalves, M. C. Istrate, Katerina Veltruska, Vladimír Matolín, Adil Chahboun, Mário Pereira, F. Figueiras, Andrei L. Kholkin, José Silva

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

The photovoltaic (PV) response of SnOx/Si heterojunctions (HJs) through the change of the SnO and SnO2 ratio in the samples that allows us to obtain p- or n-type SnOx films is investigated in this work. The values of short-circuit photocurrent densit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d73e6351d211ddb8edcc0e0481d69b1d
https://doi.org/10.1039/d0ta02198a

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Shape-controlled monolayer MoSe2 flakes by chemical vapor deposition towards tuning the photoluminescence emission

Autor: C. González, J.P.B. Silva, A.S. Viana, K. Gwozdz, O. Conde

In this study, we report on the controllable chemical vapor deposition (CVD) synthesis of monolayer MoSe2 flakes with different shapes such as hexagons, triangles, sawtooth hexagons, dendrites and fractals deposited on SiO2/Si substrates. This broad

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dc338101fcb5efca1a563ed4147fa0b
https://hdl.handle.net/1822/81280

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Akademický článek

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Akademický článek

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K zobrazení výsledku je třeba se přihlásit.

Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions

Autor: Vladimír Matolín, José Silva, E. Popko, Luís F. Santos, James P. Connolly, K. Gwozdz, Kateřina Veltruská, Ana S. Viana, O. Conde, C. Almeida Marques

Publikováno v: Scientific Reports
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-58164-7⟩
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports, Nature Publishing Group, 2020, 10 (1), ⟨10.1038/s41598-020-58164-7⟩

This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe2 layers grown by chemical vapour deposition (CVD), using MoO3 and Se powders as solid precursors. It shows the strong dependen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::757acfcb9f3b06c510977a385c4ea3c7
https://hdl.handle.net/1822/68419

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Carbon-hydrogen-related complexes in Si

Autor: R. Stübner, Vl. Kolkovsky, K. Gwozdz, Joerg Weber

Publikováno v: Physica B: Condensed Matter. 535:128-131

Several deep level transient spectroscopy (DLTS) peaks (E42, E65, E75, E90, E262, and H180) are observed in n - and p -type Czochralski-grown Si samples subjected to hydrogenation by a dc H plasma treatment. The concentration of the defects is found

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f83984c1b71213920635d13b9b55f99
https://doi.org/10.1016/j.physb.2017.06.085

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ZnO/GaAs heterojunction solar cells fabricated by the ALD method

Autor: Marek Godlewski, Ewa Placzek-Popko, K. Gwozdz, Krzysztof Kopalko, Bartlomiej S. Witkowski, R. Pietruszka, P. Caban

Publikováno v: Optik. 157:743-749

Zinc oxide is nowadays widely investigated in many different science areas. In particular, this wide band gap semiconductor is valued due to its possible use in transparent electronics as TCO (Transparent Conductive Oxide) and/or as ARC (Antireflecti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::459c7c5af7129233e767aa78309712bb
https://doi.org/10.1016/j.ijleo.2017.11.063

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