Zobrazeno 1 - 10
of 78
pro vyhledávání: '"K. Gwozdz"'
Autor:
B.A. Orlowski, K. Gwozdz, K. Goscinski, S. Chusnutdinow, M. Galicka, E. Guziewicz, B.J. Kowalski
Publikováno v:
Acta Physica Polonica A. 141:548-553
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0777476b20ff7d4c18636648b4507822
https://doi.org/10.12693/aphyspola.141.548
https://doi.org/10.12693/aphyspola.141.548
Autor:
Ewa Placzek-Popko, K. Gwozdz, Monika Ozga, R. Pietruszka, Marek Godlewski, Bartlomiej S. Witkowski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 12, Iss 1, Pp 766-774 (2021)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
Today, silicon solar cells (amorphous films and wafer-based) are a main source of green energy. These cells and their components are produced by employing various technologies. Unfortunately, during the production process, chemicals that are harmful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34755d486d1f30a0839b0fccc05e0db8
https://doi.org/10.3762/bjnano.12.60
https://doi.org/10.3762/bjnano.12.60
Autor:
João Monteiro Silva, Corneliu Ghica, Koppole C. Sekhar, K. Gwozdz, E. M. F. Vieira, Luís Gonçalves, M. C. Istrate, Katerina Veltruska, Vladimír Matolín, Adil Chahboun, Mário Pereira, F. Figueiras, Andrei L. Kholkin, José Silva
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
The photovoltaic (PV) response of SnOx/Si heterojunctions (HJs) through the change of the SnO and SnO2 ratio in the samples that allows us to obtain p- or n-type SnOx films is investigated in this work. The values of short-circuit photocurrent densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d73e6351d211ddb8edcc0e0481d69b1d
https://doi.org/10.1039/d0ta02198a
https://doi.org/10.1039/d0ta02198a
In this study, we report on the controllable chemical vapor deposition (CVD) synthesis of monolayer MoSe2 flakes with different shapes such as hexagons, triangles, sawtooth hexagons, dendrites and fractals deposited on SiO2/Si substrates. This broad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dc338101fcb5efca1a563ed4147fa0b
https://hdl.handle.net/1822/81280
https://hdl.handle.net/1822/81280
Akademický článek
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Akademický článek
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Autor:
Vladimír Matolín, José Silva, E. Popko, Luís F. Santos, James P. Connolly, K. Gwozdz, Kateřina Veltruská, Ana S. Viana, O. Conde, C. Almeida Marques
Publikováno v:
Scientific Reports
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-58164-7⟩
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports, Nature Publishing Group, 2020, 10 (1), ⟨10.1038/s41598-020-58164-7⟩
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-58164-7⟩
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports, Nature Publishing Group, 2020, 10 (1), ⟨10.1038/s41598-020-58164-7⟩
This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe2 layers grown by chemical vapour deposition (CVD), using MoO3 and Se powders as solid precursors. It shows the strong dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::757acfcb9f3b06c510977a385c4ea3c7
https://hdl.handle.net/1822/68419
https://hdl.handle.net/1822/68419
Publikováno v:
Physica B: Condensed Matter. 535:128-131
Several deep level transient spectroscopy (DLTS) peaks (E42, E65, E75, E90, E262, and H180) are observed in n - and p -type Czochralski-grown Si samples subjected to hydrogenation by a dc H plasma treatment. The concentration of the defects is found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f83984c1b71213920635d13b9b55f99
https://doi.org/10.1016/j.physb.2017.06.085
https://doi.org/10.1016/j.physb.2017.06.085
Autor:
Marek Godlewski, Ewa Placzek-Popko, K. Gwozdz, Krzysztof Kopalko, Bartlomiej S. Witkowski, R. Pietruszka, P. Caban
Publikováno v:
Optik. 157:743-749
Zinc oxide is nowadays widely investigated in many different science areas. In particular, this wide band gap semiconductor is valued due to its possible use in transparent electronics as TCO (Transparent Conductive Oxide) and/or as ARC (Antireflecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459c7c5af7129233e767aa78309712bb
https://doi.org/10.1016/j.ijleo.2017.11.063
https://doi.org/10.1016/j.ijleo.2017.11.063
Akademický článek
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