Zobrazeno 1 - 10
of 39
pro vyhledávání: '"K. Gulbinas"'
Publikováno v:
Lithuanian Journal of Physics. 61
The paper focuses on investigation of the acoustic-optical properties of 2D-TlGaSe2 and GaAs semiconductors using laser pulses. We present the photo-darkening experiments performed by using CW light in spectral ranges below the band gap of TlGaSe2. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29a5f14f2d8f51b0ddc2544ff6707eb5
https://doi.org/10.3952/physics.v61i2.4439
https://doi.org/10.3952/physics.v61i2.4439
Publikováno v:
Journal of Luminescence. 187:507-512
Intrinsic photoluminescence (PL) of undoped and of B-, Ag- or Er-doped TlInS 2 layered single crystals was investigated by confocal spectroscopy. It is found that position and intensity of PL spectral peak at 2.4 eV is vastly dependent on the excitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63451ac9053920b7bf8dbb9fec6872c
https://doi.org/10.1016/j.jlumin.2017.03.065
https://doi.org/10.1016/j.jlumin.2017.03.065
Autor:
Vitalijus Bikbajevas, V. Gavryushin, Vytautas Grivickas, Alexander K. Fedotov, Alexander V. Mazanik, Olga V. Korolik, K. Gulbinas
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:639-642
We reveal the intrinsic band-to-band photoluminescence (PL) in Tl-based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for k ⊥ c, where c is the layers stacking axis, and is dependent on polarization. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd418ca8a5b5261545d80a4646b92809
https://doi.org/10.1002/pssr.201409148
https://doi.org/10.1002/pssr.201409148
Autor:
Kipras Redeckas, S.E. Sampayan, Lars F. Voss, Paulius Grivickas, K. Gulbinas, Mihail Bora, Vytautas Grivickas, Adam M. Conway, Mikas Vengris
Publikováno v:
Journal of Applied Physics. 125:225701
Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ea44b0e664c7d126c68c7f29cf3f7a
https://doi.org/10.1063/1.5095161
https://doi.org/10.1063/1.5095161
Publikováno v:
Materials Science Forum. :465-468
This paper aims to establish a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations are made on MOS test structures utilizing Al2O3and SiO2dielectrics on 4H-SiC. These devices are then exposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ee78941d720161a2a9560a3a7783ac4
https://doi.org/10.4028/www.scientific.net/msf.740-742.465
https://doi.org/10.4028/www.scientific.net/msf.740-742.465
Publikováno v:
Materials Science Forum. :805-808
The radiation hardness of Al2O3 as a dielectric for SiC surface passivation is studied and compared to SiO2 for potential application in radiation hard SiC devices. SiO2 is deposited on 4H-SiC by PECVD and post annealed in N2O, whereas Al2O3 is depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::517b1e84a672dc64911ef27570806ea3
https://doi.org/10.4028/www.scientific.net/msf.717-720.805
https://doi.org/10.4028/www.scientific.net/msf.717-720.805
Autor:
V. Gavryushin, K. Gulbinas, Augustinas Galeckas, Paulius Grivickas, Vytautas Grivickas, Vitalijus Bikbajevas
Publikováno v:
physica status solidi (a). 208:2186-2192
Absorption measurements of TlGaSe2 crystals intentionally doped with Fe show growing optical transitions below the band gap energies as impurity concentration increase. The comprehensive theoretical analysis is performed for elucidation of subband ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faf8461dd1cbda416ebeba5adf432325
https://doi.org/10.1002/pssa.201026786
https://doi.org/10.1002/pssa.201026786
Publikováno v:
Materials Science Forum. :231-234
An alternative approach based on non-equilibrium free-carrier density measurements was used to characterize the fundamental absorption edge of 3C-SiC at room and 77 K temperatures. At 77 K temperature the extracted absorption edge compared well to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7152efd6833188fe97eb5367d246663
https://doi.org/10.4028/www.scientific.net/msf.645-648.231
https://doi.org/10.4028/www.scientific.net/msf.645-648.231
Publikováno v:
AIP Conference Proceedings.
Residual stress and carrier lifetime variation have been measured in free‐standing n‐type 3C‐SiC wafer grown on undulated Si substrate. We identify extended regions of residual stress that lie parallel to epilayer surfaces. The opposite polarit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac90318bfe0e2c3924356928507d986e
https://doi.org/10.1063/1.3518320
https://doi.org/10.1063/1.3518320
Publikováno v:
Applied Physics Letters. 105:242107
The depth-resolved free-carrier absorption and the photo-acoustic response are used to examine the band-gap absorption in 2D-TlGaSe2 layered semiconductor after its transformation into the ferroelectric F-phase below 107 K. The absorption exhibits un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59fa07a80d835511baa32b24e47845a0
https://doi.org/10.1063/1.4904884
https://doi.org/10.1063/1.4904884