Zobrazeno 1 - 10
of 36
pro vyhledávání: '"K. Gopalakrishna Naik"'
Autor:
K.S. Swathi, K. Gopalakrishna Naik
Publikováno v:
Materials Today: Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646529de20d4f3a2e11522474706c5f3
https://doi.org/10.1016/j.matpr.2023.05.184
https://doi.org/10.1016/j.matpr.2023.05.184
Autor:
K. Gopalakrishna Naik, N.S. Abishek
Publikováno v:
Materials Today: Proceedings. 49:1319-1322
Bi2Te3 nanomaterials have been synthesized using the two-step hydrothermal method at 160 °C. The structures and morphology of the samples were characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), High Resolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081a778a9b89b6ab17645c441e5c1b5a
https://doi.org/10.1016/j.matpr.2021.06.390
https://doi.org/10.1016/j.matpr.2021.06.390
Publikováno v:
Advanced Materials Proceedings. 1:210-214
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::281b817cc3549e4683248e6b714982ae
https://doi.org/10.5185/amp.2016/218
https://doi.org/10.5185/amp.2016/218
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:28542-28552
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a41d7bf14af342915926cb12e43dda
https://doi.org/10.1007/s10854-021-07233-2
https://doi.org/10.1007/s10854-021-07233-2
Autor:
K. Gopalakrishna Naik, D. Sathisha
Publikováno v:
Advanced Science Letters. 24:5691-5694
Nickel oxide (NiO) nanostructures were synthesized by hydrothermal method using ethylene glycol and double distilled water as solvent in 3:2 volume ratio. The synthesized nanostructures were characterized by XRD, FESEM, EDX, FTIR, and UV-visible spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b09d3717b1cefc9eaddbe8328b21dfd
https://doi.org/10.1166/asl.2018.12178
https://doi.org/10.1166/asl.2018.12178
Autor:
K. Gopalakrishna Naik, N.S. Abishek
Publikováno v:
Journal of Crystal Growth. 565:126141
Pure and gallium-doped bismuth telluride (Bi2Te3) nanostructures were synthesized by solvothermal method at 200 oC for 24 hours. The undoped Bi2Te3 nanostructures show flower-like morphology, on gallium-doping, the Bi2Te3 nanostructures show flake-li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a1ba65cf665924a734bfa968bf37d00
https://doi.org/10.1016/j.jcrysgro.2021.126141
https://doi.org/10.1016/j.jcrysgro.2021.126141
Autor:
M. Yashaswini, K. Gopalakrishna Naik
Publikováno v:
ADVANCES IN BASIC SCIENCE (ICABS 2019).
The Zinc oxide (ZnO) and cadmium sulfide (CdS) nanostructures and ZnO/CdS nanocomposite were prepared by a solvothermal method using acetate precursors using 1:1 volume mixture of water and ethanol as solvent. The structural characterization of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::352a5ee31c659ba4c2f853c3412fd684
https://doi.org/10.1063/1.5122535
https://doi.org/10.1063/1.5122535
Publikováno v:
Materials Today: Proceedings. 3:1620-1626
In this study CdS/Al Schottky barrier diode (SBD) was fabricated by depositing Al metal dot of area 0.001256 cm2 on spray deposited CdS thin film. Current-voltage characteristics of CdS/Al SBD were measured at different temperatures ranging 303-193 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71f97781c48638b46e4d845c16d483d7
https://doi.org/10.1016/j.matpr.2016.04.051
https://doi.org/10.1016/j.matpr.2016.04.051
Publikováno v:
Materials Today: Proceedings. 3:1693-1701
Pure and Al doped (0 - 5 at%) ZnO nanorods were prepared by two step hydrothermal method. In the first step, ZnO thin films were deposited on glass substrates by sol-gel spin coat method. In the next step, Al doped ZnO nanorods were grown on the ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::503d1b18a0f52779f442b9aaca1b5c6f
https://doi.org/10.1016/j.matpr.2016.04.061
https://doi.org/10.1016/j.matpr.2016.04.061
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