Zobrazeno 1 - 10
of 25
pro vyhledávání: '"K. Gehoski"'
Autor:
Ngoc V. Le, William J. Dauksher, Pawitter J. S. Mangat, Jeffrey H. Baker, K. Gehoski, Kevin J. Nordquist, Diana Convey, S. R. Young, Eric S. Ainley
Publikováno v:
Microelectronic Engineering. 83:929-932
Nano-imprint lithography is attracting attention as a low cost method for printing nanometer-scale geometries and has obtained placement on the International Technology Roadmap for Semiconductors as a potential lithography solution at the 32 and 22nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36822007c179413571d91bf524c4636f
https://doi.org/10.1016/j.mee.2006.01.075
https://doi.org/10.1016/j.mee.2006.01.075
Autor:
Ngoc V. Le, William J. Dauksher, Kevin J. Nordquist, Eric S. Ainley, Pawitter J. S. Mangat, K. Gehoski
Publikováno v:
Microelectronic Engineering. 83:839-842
Recent advancements made in step and flash imprint lithography (S-FIL) have enhanced the attractiveness of nanoimprint technology for sub-100nm resolution. Improvements in the area of material dispensing and refinement of the etch barrier itself have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7190a35f9eafd2d05ee2e1807b2fab29
https://doi.org/10.1016/j.mee.2006.01.254
https://doi.org/10.1016/j.mee.2006.01.254
Autor:
Sidlgata V. Sreenivasan, Jin Choi, Kevin J. Nordquist, Lester Casoose, K. Gehoski, William J. Dauksher, Douglas J. Resnick, Ashuman Cherala
Publikováno v:
Microelectronic Engineering. :633-640
High-resolution overlay is considered to be an important challenge for imprint lithography processes. A key advantage of Step and Flash(TM) Imprint Lithography (S-FIL(TM)) is that it uses low-pressures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c472c15a63e18452e3e7e3164960190
https://doi.org/10.1016/j.mee.2004.12.097
https://doi.org/10.1016/j.mee.2004.12.097
Autor:
S. Johnson, Douglas J. Resnick, William J. Dauksher, K. Gehoski, Ngoc V. Le, Grant Willson, A. E. Hooper
Publikováno v:
Microelectronic Engineering. :464-473
In order for Step and Flash Imprint Lithography (S-FIL) to be considered a viable printing technology to produce sub-100nm geometries, a reliable pattern transfer etch process needs to be established. Unlike optical lithography processes, imprinting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e43f09bf57a241cf0a7da19f2bc5d7a2
https://doi.org/10.1016/j.mee.2005.01.013
https://doi.org/10.1016/j.mee.2005.01.013
Autor:
David P. Mancini, Todd Bailey, Kevin J. Nordquist, K. Gehoski, John G. Ekerdt, Sidlgata V. Sreenivasan, Andy E. Hooper, Jeffrey H. Baker, L. Dues, William J. Dauksher, D. J. Resnick, S. Johnson, Carlton G Willson
Publikováno v:
Microelectronic Engineering. :221-228
Step and flash imprint lithography (SFIL) replicates patterns by using a transparent template with relief images etched into its surface. Recent work has examined alternative methods for template fabrication. One scheme incorporates a conductive and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f00df00ab66db40f241848d67afd96
https://doi.org/10.1016/s0167-9317(03)00075-3
https://doi.org/10.1016/s0167-9317(03)00075-3
Autor:
K. Gehoski, M. Meissl, William J. Dauksher, D. J. Resnick, Sidlgata V. Sreenivasan, Eric S. Ainley, Matthew E. Colburn, Jeffrey H. Baker, Byung Jin Choi, David P. Mancini, Kevin J. Nordquist, John G. Ekerdt, Todd Bailey, Carlton G Willson, A. Alec Talin, S. Johnson
Publikováno v:
Microelectronic Engineering. :461-467
Step and flash imprint lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fec9cc2beffe5dd4280a7a15270638a
https://doi.org/10.1016/s0167-9317(02)00462-8
https://doi.org/10.1016/s0167-9317(02)00462-8
Publikováno v:
SPIE Proceedings.
For the first time, electrically testable snake and comb structures were used to quantitatively characterize the defectivity associated with imprint lithography, specifically with Step and Flash Imprint Lithography. Whereas the overall yield for quar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3b35e46fc3148e4415c0a51a6f9223
https://doi.org/10.1117/12.712376
https://doi.org/10.1117/12.712376
Autor:
William J. Dauksher, Eric S. Ainley, Kevin J. Nordquist, Pawitter J. S. Mangat, K. Gehoski, Ngoc V. Le
Publikováno v:
SPIE Proceedings.
Nano-imprint technology has demonstrated the potential for a low-cost, high-throughput Next Generation Lithography (NGL) method extendable to ultra-fine geometry requirements. Although the development of nano-imprinting lithography has been focused o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d1683a1e4769bb461996eecd470ca7
https://doi.org/10.1117/12.657488
https://doi.org/10.1117/12.657488
Autor:
William J. Dauksher, S. R. Young, A. A. Graupera, Eric S. Ainley, Kevin J. Nordquist, K. Gehoski, M. H. Moriarty
Publikováno v:
SPIE Proceedings.
In order for Step and Flash Imprint Lithography S-FIL or any other imprint lithography to become truly viable for manufacturing, certain elements of the infrastructure must be present. In particular, these elements include; fast and precise Electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eba2fc4966aa97282e7419a95f5a200
https://doi.org/10.1117/12.659529
https://doi.org/10.1117/12.659529
Autor:
Ryan L. Burns, David P. Mancini, Jason E. Meiring, D. J. Resnick, Kevin J. Nordquist, Sean D. Burns, Gerard M. Schmid, William J. Dauksher, S. Johnson, Carlton G Willson, K. Gehoski, Peter Fejes, Eui Kyoon Kim, Yi Wei, Michael D. Dickey, Diana Convey
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:2553
Previous work with the mechanical properties of step and flash imprint lithography etch barrier materials has shown bulk volumetric shrinkage trends that could impact imprinted feature dimensions and profile. This article uses mesoscopic and finite e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a215abd42bd4b74b8ddefcdfaa0dbde9
https://doi.org/10.1116/1.2102971
https://doi.org/10.1116/1.2102971