Zobrazeno 1 - 9
of 9
pro vyhledávání: '"K. Gaule"'
Publikováno v:
Journal of Applied Physics. 52:833-839
Single‐crystal and polycrystalline NbO2 switching devices were studied by double pulse and pulse interruption techniques. Results for single‐crystal devices indicated a recovery time of 0.8–1.2 ms that is independent of the polarity relationshi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f03f9bdd8f8d21722a0940188df2ad
https://doi.org/10.1063/1.328424
https://doi.org/10.1063/1.328424
Publikováno v:
Die Naturwissenschaften. 8:830-835
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b795e54d1bf77ce10253189e3d3b63ee
https://doi.org/10.1007/bf02455372
https://doi.org/10.1007/bf02455372
Publikováno v:
Review of Scientific Instruments. 29:565-567
A sintering process has been developed which makes it possible to utilize semiconductor material which comes in the form of small grains or small dendrite‐like pieces. When pressure, alternating current, and an rf field are applied, this loose mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc5ee195a89b4081f7f00b7681e8d13
https://doi.org/10.1063/1.1716259
https://doi.org/10.1063/1.1716259
Publikováno v:
1976 International Electron Devices Meeting.
Prototypes of Metal-Oxide Threshold Switches (MOTS) have been built using bulk switching effects in chips of transition metal oxides, in most cases niobium-"dioxide", NbO 2 (x≈2). A 3 mm diameter disc of niobium oxide can pass 100A, millisecond pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b27c959f62b062a78968407cc9d39c29
https://doi.org/10.1109/iedm.1976.189038
https://doi.org/10.1109/iedm.1976.189038
The low power as well as the high power applications of superconductivity are increasing. Both are expected to benefit from the high current relay switch developed by the authors. In contrast to previous 'switching' devices, the new switch has a true
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf6046ccb6f2a99bd7a06b04d75100d0
https://doi.org/10.21236/ad0612113
https://doi.org/10.21236/ad0612113
Publikováno v:
Boron ISBN: 9781489962669
Previous work [1] described the semiconductor properties of high-purity, crystalline, beta-rhombohedral boron. It was shown that the temperature coefficient of the resistivity is high and that ohmic contacts can reliably be attached to the material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88c774eb01952dd7e73a05e70eab2c4
https://doi.org/10.1007/978-1-4899-6574-5_25
https://doi.org/10.1007/978-1-4899-6574-5_25
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.