Zobrazeno 1 - 10
of 17
pro vyhledávání: '"K. G. Oppermann"'
Publikováno v:
IEEE Transactions on Electron Devices. 45:1575-1579
The voltage and current controlled bistability of segmented anode lateral insulated gate bipolar transistors (SA-LIGBTs) containing more than one p-anode segment has been investigated experimentally by means of monitoring the infrared recombination r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07571c3d2c56a2fe8035ee1784cec2df
https://doi.org/10.1109/16.701491
https://doi.org/10.1109/16.701491
Autor:
Thomas Dr Scheiter, K.-G. Oppermann, Hergen Kapels, W.M. Werner, Max Steger, Hans-Joerg Timme, C. Hierold
Publikováno v:
Sensors and Actuators A: Physical. 67:211-214
We report a novel process for the full integration of surface-micromachined pressure-sensor cells into a standard BiCMOS process. Only the standard layers of the BiCMOS process are used to build up the sensor and only one additional photolithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af038809eeb857ef3b2a32549625ea4a
https://doi.org/10.1016/s0924-4247(98)00029-6
https://doi.org/10.1016/s0924-4247(98)00029-6
Publikováno v:
2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC).
One of the issues facing many types of oscillators is the transference of stress from the external world through the die to the resonator. Typically, resonators are clamped at more than one location. Integrated FBAR oscillators (referred to as FMOS1,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adbc181d88c99885db1b4a37a3780b04
https://doi.org/10.1109/eftf-ifc.2013.6702304
https://doi.org/10.1109/eftf-ifc.2013.6702304
Publikováno v:
IEEE Transactions on Electron Devices. 39:1521-1528
A large-area MOS-controlled thyristor (MOS-GTO) has been realized by introducing a new wafer-scale repair technique. The large-area device has a diameter of 3 cm. It has been contacted with an IC-compatible pressure contact and has been fabricated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55bba6d5bb842e64a2e309932d2e9f70
https://doi.org/10.1109/16.137335
https://doi.org/10.1109/16.137335
Publikováno v:
Physica Status Solidi (a). 123:109-118
In high energy ion implantation (50 MeV < E < 1 GeV) an unexpected high contribution of channeling to the distribution of the implanted ions is found. Thus the experimentals are simulated by means of the MARLOWE-Monte-Carlo program: (i) For the case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f33638a16c0b078c27c93689bc19908
https://doi.org/10.1002/pssa.2211230109
https://doi.org/10.1002/pssa.2211230109
Publikováno v:
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
Silicon based Bulk-Acoustic-Wave (BAW) filters utilize mainstream wafer processing and can create significant customer benefit in terms of cost, performance and size. Similar to conventional SAW filters the package is a dominant cost contributor as l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da0f5441ecf94d6577df65ad5eead64a
https://doi.org/10.1109/mwsym.2004.1336020
https://doi.org/10.1109/mwsym.2004.1336020
Autor:
K.-G. Oppermann, Michael Stoisiek
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
The design of an IGBT is always a compromise between a low on state voltage drop and low switching losses. MOS-controlled emitter shorts are well known as a means to overcome this compromise but previous solutions suffer from parasitic effects and re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb85779074dd52d40aea322b3b86c50
https://doi.org/10.1109/ispsd.1996.509490
https://doi.org/10.1109/ispsd.1996.509490
Publikováno v:
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
The paper reports a first attempt to a dielectric isolated 600 V IC-process. With commercially available direct-wafer-bonded Si/SiO/sub 2//Si-wafers we processed the isolated islands with the basic high voltage devices in a standard sub-/spl mu/ fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb993828460bf4ccf27571c4f04cd093
https://doi.org/10.1109/ispsd.1995.515058
https://doi.org/10.1109/ispsd.1995.515058
A high energy ion implantation realized in a BiCMOS technology reduces the npn-transistor collector series resistance R C and improves the Latch-up behavior.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc9ba57ab03da59c671f2f35cce0924b
https://doi.org/10.1007/978-3-642-52314-4_5
https://doi.org/10.1007/978-3-642-52314-4_5
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