Zobrazeno 1 - 10
of 12
pro vyhledávání: '"K. G. Irvine"'
Autor:
T.P. Chow, K. G. Irvine, Lin Zhu, Joseph John Sumakeris, Mark E. Twigg, P. A. Lossee, Robert E. Stahlbush
Publikováno v:
Journal of Electronic Materials. 34:351-356
Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729318449771195ca997d9633658e54e
https://doi.org/10.1007/s11664-005-0109-2
https://doi.org/10.1007/s11664-005-0109-2
Autor:
Ranbir Singh, M.F. Brady, Scott Allen, St. G. Müller, K. G. Irvine, D. Henshall, Hua-Shuang Kong, R.C. Glass, Valeri F. Tsvetkov, John W. Palmour, C.H. Carter, O. Kordina, John A. Edmond
Publikováno v:
Scopus-Elsevier
Silicon carbide technology has made tremendous strides in the last several years, with a variety of encouraging device and circuit demonstrations in addition to volume production of nitride-based blue LEDs being fabricated on SiC substrates. The comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dedfbf0807da13d4f59b82498647db65
https://doi.org/10.1016/s0921-5107(98)00437-1
https://doi.org/10.1016/s0921-5107(98)00437-1
Autor:
N. I. Kuznetsov, K. G. Irvine
Publikováno v:
Semiconductors. 32:335-338
The current-voltage characteristics of GaN and Al0.08Ga0.92N p-i-n diodes were investigated. The experimental p-i-n structures were grown by MOCVD on 6H-SiC with Si and Mg as dopants. The i region was formed by simultaneously doping with donor and ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4fe64ff2b13685e476ebd4d4a9bc570
https://doi.org/10.1134/1.1187392
https://doi.org/10.1134/1.1187392
Publikováno v:
Journal of Electronic Materials. 25:831-834
Characteristics of Schottky barriers fabricated on n-type GaN were investigated. The barriers were formed by vacuum thermal evaporation of Cr, Au, and Ni. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the barriers were measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfa665ee55ad8202b2f6cb06cdb1347c
https://doi.org/10.1007/bf02666644
https://doi.org/10.1007/bf02666644
Autor:
John W. Palmour, Michael R. Melloch, K. G. Irvine, G. L. Chindalore, Jayarama Shenoy, J.A. Cooper
Publikováno v:
Journal of Electronic Materials. 24:303-309
The response time of deep-lying interface states in silicon carbide metal-oxide semiconductor (MOS) capacitors may be thousands of years at room temperature. To accurately measure interface state density beyond about 0.6 eV from the band edge, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::addffc6a3f605975d7742b89c770522b
https://doi.org/10.1007/bf02659691
https://doi.org/10.1007/bf02659691
Publikováno v:
MRS Proceedings. 815
The early development of stacking faults in SiC PiN diodes fabricated on 8° off c-axis 4H wafers has been studied. The 150μm drift region and p-n junction were epitaxially grown. The initial evolution of the stacking faults was examined by low inje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f0caa901716af38f27b81632854d72
https://doi.org/10.1557/proc-815-j6.4
https://doi.org/10.1557/proc-815-j6.4
Autor:
C. H. Carter, V. I. Nikolaev, D. V. Tsvetkov, J. A. Edmond, K. G. Irvine, Andrey Zubrilov, V. A. Dmitriev
Publikováno v:
Applied Physics Letters. 67:533-535
Photoluminescence of GaN layers grown on 6H–SiC substrates was studied in the temperature range 77–900 K. GaN layers were grown by metalorganic chemical vapor deposition. The temperature dependence of the band gap of GaN was measured throughout t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2048ed031b70e4c9f4250edb192e1de2
https://doi.org/10.1063/1.115179
https://doi.org/10.1063/1.115179
Publikováno v:
Applied Physics Letters. 67:115-117
AlGaN pn homo‐ and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electrolumine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10e1dc5601db1e68f0f7c59eca08502
https://doi.org/10.1063/1.115501
https://doi.org/10.1063/1.115501
Publikováno v:
MRS Proceedings. 395
Electric breakdown of mesa terminated GaN and AlGaN pn diodes was investigated. The nitride pn structures were grown on 6H-SiC (0001) wafers by metalorganic chemical vapor deposition (MOCVD). Mesa structures were fabricated by reactive ion etching (R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3513bedbaf08e4d980a8072642fb2627
https://doi.org/10.1557/proc-395-909
https://doi.org/10.1557/proc-395-909
Publikováno v:
MRS Proceedings. 339
A measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K100) or (1120)surfaces having total impurity concentrations 1017-1018 cm-3. The observed mobility ratio for 4H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36970171b6834918cfdf4a5a7b1e7313
https://doi.org/10.1557/proc-339-595
https://doi.org/10.1557/proc-339-595