Zobrazeno 1 - 6
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pro vyhledávání: '"K. G. Hambleton"'
Autor:
K. G. Hambleton, L. N. Large
Publikováno v:
Advances in Solid State Physics ISBN: 9783540753254
In Referaten des Fachausschusses „Halbleiterphysik” der Deutschen Physikalischen Gesellschaft München, 19. bis 22. März 1969 zugleich Hauptvorträge der Europäischen Tagung des IEEE: „Forschung auf dem Gebiet der Halbleiterbauelemente” München, 24. bis 27 ISBN: 9783112528808
In Referaten des Fachausschusses „Halbleiterphysik” der Deutschen Physikalischen Gesellschaft München, 19. bis 22. März 1969 zugleich Hauptvorträge der Europäischen Tagung des IEEE: „Forschung auf dem Gebiet der Halbleiterbauelemente” München, 24. bis 27 ISBN: 9783112528808
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f6f08f106ab99dd8fb7bac9738e2bf5
https://doi.org/10.1007/bfb0109160
https://doi.org/10.1007/bfb0109160
Autor:
K G Hambleton
Publikováno v:
Journal of Physics E: Scientific Instruments. 7:1-9
Avalanche diodes are finding an increasing number of applications as sources of microwave power in the frequency rane 1-100 GHz. There are two basic modes of operation; the IMPATT mode in which the diode behaves as a negative conductance in a resonan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ac142885cde1b7ed21e285c496e4e26
https://doi.org/10.1088/0022-3735/7/1/001
https://doi.org/10.1088/0022-3735/7/1/001
Autor:
P. N. Robson, K. G. Hambleton
Publikováno v:
International Journal of Electronics. 35:225-244
It is shown theoretically that distributed IMPATT structures can be used as resonant lengths of active transmission line if particular care is taken to choose the substrate thickness and resistivity correctly in order to minimize losses. In contrast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92d056956253c507a07bb09b9783300a
https://doi.org/10.1080/00207217308938537
https://doi.org/10.1080/00207217308938537
Publikováno v:
Proceedings of the Physical Society. 77:1147-1148
Direct measurements of static and optical dielectric constants have been made on GaAs with a resistivity of 109 ohm cm at room temperature. Values obtained were 0 = 12.5(3) and ∞ = 10.90. An effective ionic charge es* of 0.46e can be deduced from t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c1fb976ccfc3f5d0fea4a733988c292
https://doi.org/10.1088/0370-1328/77/6/306
https://doi.org/10.1088/0370-1328/77/6/306
Publikováno v:
Nature. 185:676-677
ESAKI, or tunnel, diodes1–3 in gallium arsenide have been made in this Laboratory. Zinc-doped gallium arsenide was prepared by diffusion to give a concentration of 9 × 1019 impurity atoms/cm.3 and tin pellets were alloyed on to this material to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9089759398538f85050452a21ae4248c
https://doi.org/10.1038/185676a0
https://doi.org/10.1038/185676a0
Autor:
F E Birbeck, K G Hambleton
Publikováno v:
Journal of Scientific Instruments. 42:541-542
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::313100abe0c9c1476790ac95795a6ac0
https://doi.org/10.1088/0950-7671/42/8/316
https://doi.org/10.1088/0950-7671/42/8/316