Zobrazeno 1 - 9
of 9
pro vyhledávání: '"K. G. Eyink"'
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075115-075115-5 (2021)
The authors demonstrate the ability to create an ultrafast hyperbolic momentum state using metallic InAsSb alloys embedded within dielectric GaSb and explore the possibility of transient modification of metamaterials to control the optical properties
Externí odkaz:
https://doaj.org/article/0d7ea79891024701a4f55a67ca1888d2
Publikováno v:
Journal of Applied Physics. 133:024301
The prospect of implementing quantum device architectures with technologically mature III–V semiconductors requires precisely controlled topologically protected edge states and bulk insulation. However, experimentally reaching this regime with III
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba9af0bc88b2c1816ae070fe011f5552
https://doi.org/10.1063/5.0135914
https://doi.org/10.1063/5.0135914
Autor:
H. J. Haugan, D. Das, S. Bharadwaj, L. R. Ram-Mohan, J. P. Corbett, R. K. Smith, J. A. Gupta, K. Mahalingam, R. G. Bedford, K. G. Eyink
Publikováno v:
Applied Physics Letters. 121:062109
Generating large topologically protected surface currents using conventional III–V infrared materials such as InAsSb/InGaSbAs quantum wells (QWs) and superlattices (SLs) has been important. In such materials, topological states can be formed at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::669506b015ad67bbd21d3b52ffbe2f5c
https://doi.org/10.1063/5.0099721
https://doi.org/10.1063/5.0099721
Publikováno v:
Journal of Electronic Materials. 31:1112-1116
A single-point diamond machine fabricated patterns with a series of equispaced lines in an area of nominally 10 µm × 10 µm. On a single GaAs wafer, patterns having 80, 100, 120, and 140 lines were machined. Sample patterns were formed with 5-mg an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d053a43de7381e71e87777b420b79a
https://doi.org/10.1007/s11664-002-0050-6
https://doi.org/10.1007/s11664-002-0050-6
Autor:
D. H. Tomich, K. G. Eyink, L. Grazulis, G. L. Brown, F. Szmulowicz, K. Mahalingam, M. L. Seaford, C. H. Kuo, W. Y. Hwang, C. H. Lin
Publikováno v:
Journal of Electronic Materials. 29:940-943
This paper contains the characterization results for indium arsenide/indium gallium antimonide (InAs/InGaSb) superlattices (SL) that were grown by molecular beam epitaxy (MBE) on standard gallium arsenide (GaAs), standard GaSb, and compliant GaAs sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe76dee6f77e94bd0d532a909d887547
https://doi.org/10.1007/s11664-000-0185-2
https://doi.org/10.1007/s11664-000-0185-2
Publikováno v:
Journal of Materials Engineering and Performance. 2:715-720
Real-time, heuristic-based control is appropriate for materials processes where accurate numerical models are not available. Frequently,bdthe scientists working with a process base their decisions when controlling the process on a set of heuristics.T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd161ca780d4236b4b64a484690d01b
https://doi.org/10.1007/bf02650061
https://doi.org/10.1007/bf02650061
Normal Incidence Photoresponse as a Function of Well Width in P-Type GaAs/AlGaAs Multi-Quantum Wells
Publikováno v:
MRS Proceedings. 450
We have performed an optimization study of the mid-infrared photoresponse of p-type GaAs/AlGaAs Quantum Well Infrared Photodetectors (QWIPs) designed for normal incidence detection. In these p-type quantum wells, normal incidence absorption is allowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92a2e07cce70211b223a5b53ab6c0935
https://doi.org/10.1557/proc-450-231
https://doi.org/10.1557/proc-450-231
Publikováno v:
MRS Proceedings. 299
Ternary and quaternary III-V alloys are important for many optical device applications, and a precise control of the composition is required. Molecular beam epitaxy (MBE) is generally considered a non-equilibrium or kinetically controlled process but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f5bdf7e1d8e59c607c9f4f4361c0de
https://doi.org/10.1557/proc-299-9
https://doi.org/10.1557/proc-299-9
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:2549-2553
Intensity profiles along the specular streak of the reflection high‐energy electron diffraction (RHEED) pattern observed during GaAs growth by molecular‐beam epitaxy (MBE) show intensity peaks from diffuse scattering processes as well as the spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470b8acd133ddf230b05f16d0baa1398
https://doi.org/10.1116/1.575795
https://doi.org/10.1116/1.575795