Zobrazeno 1 - 10
of 165
pro vyhledávání: '"K. F. Yarn"'
Publikováno v:
Active and Passive Electronic Components, Vol 26, Iss 2, Pp 71-79 (2003)
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1
Externí odkaz:
https://doaj.org/article/041f2303f1cd4910bbff64957d6d20f8
Autor:
K. F. Yarn, J. Y. Hwang
Publikováno v:
Active and Passive Electronic Components, Vol 26, Iss 1, Pp 51-62 (2003)
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST tran
Externí odkaz:
https://doaj.org/article/25a1ef1da6d64570a16d9fa8cfb46544
Publikováno v:
Active and Passive Electronic Components, Vol 26, Iss 2, Pp 115-127 (2002)
The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottk
Externí odkaz:
https://doaj.org/article/019ffb631b9c4b5a8cb65446f9878b12
Autor:
K. F. Yarn
Publikováno v:
Active and Passive Electronic Components, Vol 25, Iss 3, Pp 245-248 (2002)
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room t
Externí odkaz:
https://doaj.org/article/73aef8dcedfc421d96a99548c86d7f7b
Autor:
K. F. Yarn
Publikováno v:
Active and Passive Electronic Components, Vol 25, Iss 3, Pp 239-243 (2002)
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and
Externí odkaz:
https://doaj.org/article/952de29ddf10483089ab96a8053a290d
Autor:
K. F. Yarn
Publikováno v:
Active and Passive Electronic Components, Vol 25, Iss 3, Pp 233-237 (2002)
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped neg
Externí odkaz:
https://doaj.org/article/40408e9179174183a4c9741c091b4c55
Publikováno v:
Active and Passive Electronic Components, Vol 23, Iss 4, Pp 237-253 (2001)
The effects of biaxial strain produced by the lattice mismatch of constituent materials on the optical properties of strained In1−xGaxAsyP1−y/In1−xGaxAs quantum well lasers are investigated.
Externí odkaz:
https://doaj.org/article/dd31648f98974488b975add50d4c58dd
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 1, Pp 1-11 (2001)
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics ar
Externí odkaz:
https://doaj.org/article/6f8fc7a1db3a4ea6858d6c8f0fd825b3
Autor:
K. F. Yarn, K. H. Ho
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 4, Pp 265-287 (2001)
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical mod
Externí odkaz:
https://doaj.org/article/b682ad7835db45d2ba5f94aff90c5277
Publikováno v:
Active and Passive Electronic Components, Vol 23, Iss 4, Pp 231-236 (2001)
A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characte
Externí odkaz:
https://doaj.org/article/d56f8b47bfe3461c964fb1659e543dc2