Zobrazeno 1 - 10
of 16
pro vyhledávání: '"K. F. Shtel'makh"'
Publikováno v:
Semiconductors. 55:891-894
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4087e05d15c9af2b9c68c57525665deb
https://doi.org/10.1134/s1063782621100237
https://doi.org/10.1134/s1063782621100237
Autor:
Nikolai A. Sobolev, L. I. Fedina, A. E. Kalyadin, K. F. Shtel’makh, Anton K. Gutakovskii, V. I. Vdovin, Elena I. Shek
Publikováno v:
Crystallography Reports. 66:625-635
The structure and luminescence properties of Czochralski-grown n-Si samples implanted with oxygen ions have been comprehensively analyzed using photoluminescence and transmission electron microscopy (TEM). A high oxygen concentration (5 × 1019 cm–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3156bf9962160fa14ea2e9c373dbdf09
https://doi.org/10.1134/s1063774521040210
https://doi.org/10.1134/s1063774521040210
Autor:
E. I. Shek, A. E. Kalyadin, N. A. Sobolev, P. N. Aruev, K. V. Karabeshkin, K. F. Shtel’makh, V. V. Zabrodskii
Publikováno v:
Semiconductors. 54:687-690
Silicon light-emitting diodes with luminescence associated with (113) defects are fabricated by the implantation of 350-keV oxygen ions at a dose of 3.7 × 1014 cm–2 and subsequent annealing at 700°C for 1 h in a chlorine-containing atmosphere. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a39728ac7e5e90437034d80584a0dca
https://doi.org/10.1134/s1063782620060081
https://doi.org/10.1134/s1063782620060081
Autor:
Elena I. Shek, K. F. Shtel’makh, A. E. Kalyadin, P. N. Aruev, K. V. Karabeshkin, V. V. Zabrodskii, Nikolai A. Sobolev
Publikováno v:
Physics of the Solid State. 58:2499-2502
The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 1013–1.7 × 1015 cm–2 and the subsequent annealing at a temperature of 700°C for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d1883f33625b6459e13a199247ae4f
https://doi.org/10.1134/s1063783416120283
https://doi.org/10.1134/s1063783416120283
Autor:
V. V. Zabrodskiy, David Tetelbaum, Elena I. Shek, M. V. Konovalov, Alexey Mikhaylov, Nikolai A. Sobolev, P. N. Aruev, K. F. Shtel’makh, A. E. Kalyadin
Publikováno v:
Semiconductors. 50:240-243
Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on n-Si. In LEDs based on p-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f8dc1af62c8d745dcdfaae4b70b4c7d
https://doi.org/10.1134/s1063782616020238
https://doi.org/10.1134/s1063782616020238
Autor:
Elena I. Shek, P. N. Aruev, Deren Yang, K. F. Shtel’makh, Nikolai A. Sobolev, V. V. Zabrodskiy, A. E. Kalyadin
Publikováno v:
Semiconductors. 50:252-256
The electroluminescence (EL) in n+–p–p+ light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e5d467b2c33445b44829a54023ebca
https://doi.org/10.1134/s106378261602024x
https://doi.org/10.1134/s106378261602024x
Autor:
S. M. Yakubenya, K. F. Shtel’makh
Publikováno v:
Applied Magnetic Resonance. 47:671-684
The results of experimental investigations of electron spin resonance (ESR) spectra of manganese impurity ions in a GaAs:Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fd4d471b10b747c4478027dffae994
https://doi.org/10.1007/s00723-015-0746-4
https://doi.org/10.1007/s00723-015-0746-4
Publikováno v:
Semiconductors. 49:1651-1654
Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1841ebc3a2e7b18bc5dbe657513ed3ef
https://doi.org/10.1134/s1063782615120209
https://doi.org/10.1134/s1063782615120209
Publikováno v:
Semiconductors. 51:1133-1135
Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014 cm–2 and annealed at a temperature of 700°C for 1 h in a chlorine-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00b423576a09d00f748fc03e1e52c1b
https://doi.org/10.1134/s1063782617090202
https://doi.org/10.1134/s1063782617090202
Publikováno v:
Semiconductors. 37:872-875
ESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4c8421e382b17ae274ecfffda56624
https://doi.org/10.1134/1.1601652
https://doi.org/10.1134/1.1601652