Zobrazeno 1 - 7
of 7
pro vyhledávání: '"K. F. Lamprecht"'
Publikováno v:
Physical Review B. 53:12581-12584
We report the evidence of occupation inversion in time average within the continuous band structure of the semiconductor InP. Ultrafast carrier trapping and recombination (\ensuremath{\tau}\ensuremath{\approxeq}1\ifmmode\times\else\texttimes\fi{}${10
Publikováno v:
Semiconductor Science and Technology. 9:456-458
The ultrafast relaxation of minority electrons in highly doped p-GaAs ( rho =1.0*1019cm-3) has been investigated through femtosecond lime-resolved luminescence. For low excitation densities the hole plasma temperature stays at 300 K and the transient
Publikováno v:
Applied Physics Letters. 62:1958-1960
We have fabricated submicron GaAs crystals by pulverization of bulk material. Size selected crystals exhibit modified photoluminescence spectra with blue shifts of up to 10 meV. The observed behavior is explained by the enhancement and the inhibition
Publikováno v:
Semiconductor Science and Technology. 7:B151-B153
The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H+-bombarded InP for different damage doses by means of femtosecond luminescence spectroscopy. The lifetime decreases down to 95 fs for a dose of 1016 cm-2 and
Publikováno v:
Applied Physics Letters. 59:926-928
We studied the lifetimes of photoexcited carriers in H+ bombarded InP for different damage doses by means of femtosecond luminescence spectroscopy. The lifetime decreases down to 95 fs for a dose of 1×1016 cm−2. To our knowledge this is the shorte
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
In a previous conference1 we have reported on carrier distributions in radiation-damaged semiconductors with ultrashort lifetimes. The short existence of the electron-hole distribution has lead to luminescence spectra far from equilibrium due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c8438a1f37fb81f0777efe0ec8f2c12
https://doi.org/10.1007/978-1-4613-0401-2_139
https://doi.org/10.1007/978-1-4613-0401-2_139
Publikováno v:
Springer Series in Chemical Physics ISBN: 9783642842719
Time—resolved photoluminescence in H+ bombarded InP reveals decay times down to 415 fs due to ultrafast recombination processes which are in the same order of magnitude as the intraband relaxation processes. As a consequence extreme nonequilibrium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718dbf8277a12db61080ab7a642514aa
https://doi.org/10.1007/978-3-642-84269-6_89
https://doi.org/10.1007/978-3-642-84269-6_89