Zobrazeno 1 - 10
of 22
pro vyhledávání: '"K. F. Chien"'
Publikováno v:
Journal of Crystal Growth. 378:466-469
The growth and optical properties of self-assembled ZnO nanorods grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) were studied. By controlling the Zn/O flux ratio, the growth of ZnO nanorods on Si(111) substrate without c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e0656e1b1043dcc8f46ddf778dad13
https://doi.org/10.1016/j.jcrysgro.2012.12.137
https://doi.org/10.1016/j.jcrysgro.2012.12.137
Publikováno v:
Journal of Crystal Growth. 378:222-225
The growth evolution and the magneto-optical characteristics of the self-assembled single-layer ZnTe/ZnMnSe quantum dots grown by molecular beam epitaxy were investigated. As the ZnTe coverage is above 2.0 monolayers, a Stranski–Krastanov growth pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce7b4e77df8f3e177987153d903d3329
https://doi.org/10.1016/j.jcrysgro.2012.11.009
https://doi.org/10.1016/j.jcrysgro.2012.11.009
Autor:
Ling Lee, Wu-Ching Chou, Y. C. Lin, W. L. Hsu, K. F. Chien, C. H. Chia, Chu-Shou Yang, A. J. Tzou
Publikováno v:
Journal of Crystal Growth. 378:208-211
A3. Molecular beam epitaxy B1. Oxides B1. Zinc compounds B2. Semiconducting II-VI materials abstract The thermal-activated carrier transfer processes in a Zn0.98Cd0.02O thin film grown by plasma- assisted molecular beam epitaxy were investigated usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82567a48deec489b72798f55af99797f
https://doi.org/10.1016/j.jcrysgro.2012.12.151
https://doi.org/10.1016/j.jcrysgro.2012.12.151
Publikováno v:
Journal of Crystal Growth. 378:218-221
Zn 1− x Mn x O ( x =0–0.061) thin films were grown by molecular beam epitaxy (MBE) system. Transmittance shows an increase of the band gap with the increasing Mn concentration. Resonant Raman scattering (RRS) spectra showed 11 longitudinal optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6efc44ab0d9f2b9cce75a723abbe54f
https://doi.org/10.1016/j.jcrysgro.2012.11.052
https://doi.org/10.1016/j.jcrysgro.2012.11.052
Autor:
Jui Tai Ku, Jen-Inn Chyi, W. C. Fan, Wen-Hao Chang, Wei-Kuo Chen, L. Lee, Y. C. Lin, Chi Yung Chen, K. F. Chien, Wu-Ching Chou, H. L. Chung
Publikováno v:
Journal of Crystal Growth. 323:122-126
We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe 1− x O x ( x =0−0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be0237002a8a8fb0bd2cbb922036ef40
https://doi.org/10.1016/j.jcrysgro.2010.10.106
https://doi.org/10.1016/j.jcrysgro.2010.10.106
Autor:
Sheng-Rui Jian, Chih-Wei Luo, K. F. Chien, Chu-Shou Yang, J. Y. Lai, Jyh-Shyang Wang, Wu-Ching Chou, Y. T. Shih
Publikováno v:
Journal of the Korean Physical Society. 53:2905-2908
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af9edf1b537c22ccb1bf930ca276389
https://doi.org/10.3938/jkps.53.2905
https://doi.org/10.3938/jkps.53.2905
Autor:
Chu-Shou Yang, Jyh Shyang Wang, Yin-Chieh Lai, D. S. Chen, K. F. Chien, Wu-Ching Chou, Y. T. Shih
Publikováno v:
Journal of Crystal Growth. :301-305
This study investigates the growth mode of highly lattice-mismatch ( ∼ 14 % ) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::203c476909be2e5b5809958692602fca
https://doi.org/10.1016/j.jcrysgro.2006.11.176
https://doi.org/10.1016/j.jcrysgro.2006.11.176
Autor:
K. F. Chien, Clement Hsingjen Wann, Wu-Ching Chou, Cheng-Hsien Wu, You Ru Lin, Chih-Hsin Ko, Wen Chung Fan, Yan-Kuin Su, Cheng Tien Wan, Ling Lee, Chao Wei Hsu, Yung Feng Chen
Publikováno v:
Japanese Journal of Applied Physics. 51:06FG15
The strains in GaAs nanowires, which were grown from 1700- to 80-nm-wide trenches on the Si(001) wafer with SiO2 masks, were investigated by cathodoluminescence. For 1700- to 500-nm-wide trenches, the in-plane tensile strain at 15 K decreases with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b6acb162fb4d73fbda3968dfd2174d5
https://doi.org/10.1143/jjap.51.06fg15
https://doi.org/10.1143/jjap.51.06fg15
Autor:
Clement Hsingjen Wann, K. F. Chien, Cheng-Hsien Wu, Cheng Tien Wan, Wu-Ching Chou, Chao Wei Hsu, Chih-Hsin Ko, You Ru Lin, Ling Lee, Yan-Kuin Su, Yung Feng Chen
Publikováno v:
CrystEngComm. 14:4486
The improved design of sub-micron trenches on Si(001) substrate was demonstrated for defect suppression in semi-polar selectively-grown GaN layers. Cathodoluminescence and transmission electron microscopy measurements revealed a dramatically decrease
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33445864287f604031dbf8a9b10c02ad
https://doi.org/10.1039/c2ce25335f
https://doi.org/10.1039/c2ce25335f