Zobrazeno 1 - 10
of 15
pro vyhledávání: '"K. F. Brown‐Goebeler"'
Autor:
Uziel Koren, Barry Miller, Thomas L. Koch, J.-M. Verdiell, F. Storz, M.E. Young, K. F. Brown-Goebeler
Publikováno v:
IEEE Photonics Technology Letters. 6:960-962
We demonstrate a photonic circuit with an optical preamplifier, a WDM filter and a fast photodetector integrated on the same chip. The passive integrated filter is formed by an aspheric waveguide lens and a planar Bragg grating. This arrangements yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fa71bf12b090f94f8b6489d80d308d5
https://doi.org/10.1109/68.313064
https://doi.org/10.1109/68.313064
Autor:
B. Tell, M. Zirngibl, Thomas L. Koch, M. A. Newkirk, C. Dragone, B. Glance, K. F. Brown-Goebeler, M. G. Young, Barry Miller, Uziel Koren, M. Chien, Gregory Raybon
Publikováno v:
Applied Physics Letters. 61:1613-1615
An InP based 1×16 optical switch is demonstrated. The sixteen output ports are spaced 250 μm apart, and the total device length is 5.9 mm. Optical amplifiers are used to gate the optical signals and to provide optical gain. The total loss of the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::515ad4081d4ca3a0ebb3a9df019e586b
https://doi.org/10.1063/1.108464
https://doi.org/10.1063/1.108464
Publikováno v:
Journal of Applied Physics. 71:2449-2451
We describe procedures to grow InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors (HBTs) on Si‐implanted InP substrates by molecular beam epitaxy (MBE). The combined effects of ion implantation and annealing necessitates a signifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6abb65c61980064aff63c72df9772a25
https://doi.org/10.1063/1.351108
https://doi.org/10.1063/1.351108
Autor:
M. G. Young, C. A. Burrus, Thomas L. Koch, M. Oron, Uziel Koren, K. F. Brown-Goebeler, M. Chien, Gregory Raybon, Jose L. deMiguel, Barry Miller, B. Tell
Publikováno v:
Applied Physics Letters. 57:1375-1377
We describe integration of lasers and optical amplifiers at 1.3 μm wavelength. The effects of the residual mirror reflectivity at the amplifier front facet are discussed. Using photonic integration techniques very high coupling efficiency of light f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0723d28b5067deca14e0b600dd416cdd
https://doi.org/10.1063/1.103440
https://doi.org/10.1063/1.103440
Publikováno v:
Applied Physics Letters. 56:2657-2659
Enhanced diffusion of Si due to He ion implantation in Si‐delta doped GaAs layers has been observed by the capacitance‐voltage technique. After an 800 °C anneal, an increase as large as an order of magnitude in the diffusion coefficient compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc78229516625c3506d230d785aa946
https://doi.org/10.1063/1.102844
https://doi.org/10.1063/1.102844
Autor:
Barry Miller, J.-M. Verdiell, K. F. Brown-Goebeler, M.G. Young, F. Storz, Thomas L. Koch, Uziel Koren
Publikováno v:
Integrated Photonics Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fde3233cae6c47ff57dd55f5d1109f3f
https://doi.org/10.1364/ipr.1994.fc5
https://doi.org/10.1364/ipr.1994.fc5
Publikováno v:
Integrated Photonics Research.
Guided-wave Y-junction optical switches based on modal evolution have been demonstrated to be polarization and wavelength insensitive by utilizing their "digital" response with respect to applied voltage [1], [2]. However, the voltage-length (VL) pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c6cbd304d9a7fb87856afbeedf21b04
https://doi.org/10.1364/ipr.1994.thf13
https://doi.org/10.1364/ipr.1994.thf13
Autor:
M.G. Young, Gregory Raybon, Uziel Koren, Barry Miller, M. A. Newkirk, Thomas L. Koch, M. Chien, B. Tell, C. Dragone, K. F. Brown-Goebeler, M. Zirngibl, B. Glance
Publikováno v:
Optical Amplifiers and Their Applications.
An InP based 1×16 optical switch is demonstrated. The output ports are spaced 250 microns apart, and the total device length is 5.9 mm. Optical amplifiers are used to both gate the optical signals and to provide optical gain. The total net loss of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86fb31862200e379ebc464f4dd75eb78
https://doi.org/10.1364/oaa.1992.pd8
https://doi.org/10.1364/oaa.1992.pd8
Autor:
B. Tell, K. F. Brown‐Goebeler
Publikováno v:
Journal of Applied Physics. 62:813-818
Temperature‐dependent electrical measurements on light ion bombarded n‐type In0.53Ga0.47As established the presence of deep donors. The depth profiles of the net donor concentration of these samples were obtained by the electrochemical capacitanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b344d34e2b2b9f8832b31fafa5abba
https://doi.org/10.1063/1.339711
https://doi.org/10.1063/1.339711
Autor:
J. W. Sulhoff, Jason M. Brown, K. F. Brown-Goebeler, J. L. Zyskind, Barry Miller, Bart C. Johnson, B. Tell, Uziel Koren
Publikováno v:
Applied Physics Letters. 52:1428-1430
Selective disordering of In0.53Ga0.47As‐InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86efc82b3183d31f7e03efd6d697cf6
https://doi.org/10.1063/1.99136
https://doi.org/10.1063/1.99136