Zobrazeno 1 - 10
of 61
pro vyhledávání: '"K. Eisenbeiser"'
Autor:
J. Kidder, Jun Ouyang, V. N. Kulkarni, R. Ramesh, S. Y. Yang, Ravindranath Droopad, K. Eisenbeiser, B. T. Liu, Valanoor Nagarajan
Publikováno v:
Journal of Electroceramics. 14:37-44
La0.5Sr0.5CoO3/Pb(Zr x Ti1−x)O3/La0.5Sr0.5CoO3 capacitors have been successfully fabricated by liquid delivery metalorganic chemical vapor deposition on Si wafers using SrTiO3 thin layer (20 nm) as a template. Zr(dmhd)4 in tetrahydrofuran was used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e6dd6a7202ac5a0ac88949dc47badc
https://doi.org/10.1007/s10832-005-6582-4
https://doi.org/10.1007/s10832-005-6582-4
Autor:
Jay Curless, H. Li, Daniel S. Marshall, K. Eisenbeiser, Yi Wei, Ravindranath Droopad, Yong Liang, Dirk Jordan, K. Moore, B. Craigo, J. Kulik, Jeffrey M. Finder, X. Hu, Corey Overgaard, Peter Fejes, Zhiyi Jimmy Yu
Publikováno v:
Thin Solid Films. :51-56
Direct epitaxy of high-quality perovskite oxides on silicon paves the way for their integration with Si microelectronics. At Motorola Labs, we have achieved heteroepitaxy of high-quality perovskite oxide films and stacks on up to 8-in. Si and silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af6e8c70e3dd92e27e533a4948b91e3
https://doi.org/10.1016/j.tsf.2004.05.088
https://doi.org/10.1016/j.tsf.2004.05.088
Autor:
Steven A. Voight, Corey Overgaard, Zhiyi Jimmy Yu, K. Eisenbeiser, Ravindranath Droopad, David Penunuri, J. Kulik, Steven M. Smith, Jeffrey M. Finder
Publikováno v:
Journal of Electronic Materials. 32:868-871
We have developed a process to grow epitaxial SrTiO3 (STO) on Si. This STO/Si substrate can then be used as a pseudo substrate for the further deposition of many other oxides that are closely lattice matched to STO. The STO is grown by molecular-beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ae2c6c84aaa5da31d2a7007060494e
https://doi.org/10.1007/s11664-003-0202-3
https://doi.org/10.1007/s11664-003-0202-3
Publikováno v:
Integrated Ferroelectrics. 52:19-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a35bf4d4ad1f058b0f5119e3871909c
https://doi.org/10.1080/743845152
https://doi.org/10.1080/743845152
Autor:
Jeffrey M. Finder, Jamal Ramdani, Ravindranath Droopad, Zhong Lin Wang, Ramamoorthy Ramesh, K. Eisenbeiser, Junling Wang, G. Y. Yang, Zhiyi Jimmy Yu
Publikováno v:
Journal of Materials Research. 17:204-213
Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc27e5bb3e092985ab950c580f8e37bc
https://doi.org/10.1557/jmr.2002.0030
https://doi.org/10.1557/jmr.2002.0030
Autor:
Corey Overgaard, Zhiyi Jimmy Yu, William J. Ooms, Ravi Droopad, Jay Curless, K. Eisenbeiser, Jamal Ramdani, Jeffrey M. Finder, Lyndee L. Hilt, John L. Edwards
Publikováno v:
Materials Science and Engineering: B. 87:292-296
Thin films of perovskite-type oxide SrTiO 3 have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ad165b92386b0377e883b7daf08484
https://doi.org/10.1016/s0921-5107(01)00727-9
https://doi.org/10.1016/s0921-5107(01)00727-9
Autor:
Xiaoming Hu, William J. Ooms, John L. Edwards, Jay Curless, Ravindranath Droopad, K. Eisenbeiser, Dror Sarid, Zhiyi Jimmy Yu
Publikováno v:
Applied Surface Science. 181:103-110
The adsorption of submonolayers and monolayers of strontium and barium on Si(1 0 0) are reported using low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The samples were prepared by deposition at room temperature followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a3fa7752ae12f19d426a8a5f9d2b81
https://doi.org/10.1016/s0169-4332(01)00379-8
https://doi.org/10.1016/s0169-4332(01)00379-8
Autor:
Jamal Ramdani, Vidya Kaushik, Jay Curless, William J. Ooms, Jeffrey M. Finder, Corey Overgaard, S Pietambaram, Zhiyi Jimmy Yu, J. A. Hallmark, K. Eisenbeiser, Ravindranath Droopad, Prasad V. Alluri
Publikováno v:
Applied Surface Science. :127-133
Single-crystal SrTiO3 has been grown on Si(100) using molecular beam epitaxy (MBE). The growth conditions, especially at the initial stage of nucleation, have a great impact on the SrTiO3/Si interface. A regrowth of an amorphous interfacial layer as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93244bf681c193a9731068424eac5cb6
https://doi.org/10.1016/s0169-4332(00)00050-7
https://doi.org/10.1016/s0169-4332(00)00050-7
Autor:
Todd Brintlinger, Haimei Zheng, K. Eisenbeiser, Z. Yu, Michael S. Fuhrer, B. M. Kim, Enrique Cobas, Jamal Ramdani, Ravindranath Droopad
Publikováno v:
Applied Physics Letters. 84:1946-1948
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e51c8a3b1fc483bab8780f6a4be1fc8
https://doi.org/10.1063/1.1682691
https://doi.org/10.1063/1.1682691
Autor:
J. Yu, J. Misewich, S. B. Ogale, K. Eisenbeiser, R. Ramesh, Ravi Droopad, T. Zhao, S. R. Shinde
Publikováno v:
Applied Physics Letters. 84:750-752
An all-perovskite ferroelectric field-effect transistor with a ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) gate and a colossal magnetoresistive La0.8Ca0.2MnO3 (LCMO) channel has been successfully fabricated by pulsed-laser deposition on Si. A clear and squa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1a5da15c04e55f7bf454485efa4bd1e
https://doi.org/10.1063/1.1644321
https://doi.org/10.1063/1.1644321