Zobrazeno 1 - 10
of 10
pro vyhledávání: '"K. E. von Dessonneck"'
Autor:
Ann F. Marshall, J. T. Sizemore, James S. Harris, K. E. von Dessonneck, John C. Bravman, Ivan Bozovic, James N. Eckstein, Darrell G. Schlom, Z. J. Chen
Publikováno v:
Journal of Crystal Growth. 102:361-375
The in situ epitaxial growth of Bi-Sr-Ca-Cu-O films by molecular beam epitaxy (MBE) is reported. The suitability of various oxidants for the MBE growth of cuprate superconductors is discussed and the use of ozone described. Molecular beams of the con
Autor:
James S. Harris, Darrell G. Schlom, Ivan Bozovic, James N. Eckstein, S. M. Baumann, K. E. von Dessonneck
Publikováno v:
Applied Physics Letters. 57:931-933
Atomic layering of high‐temperature superconducting compounds has been employed to grow films of Bi2Sr2Ca2Cu3Ox, in situ, on SrTiO3 substrates. Atomic monolayers of the constituent atoms were sequentially deposited by shuttering the fluxes from the
Publikováno v:
MRS Proceedings. 502
We have successfully implemented RHEED monitoring of growth of complex oxides in a reactive evaporation process with substrate rotation and an oxygen environment. A rotating substrate heater is used with a partial enclosure kept at a 10 mTorr oxygen
Autor:
Ann F. Marshall, Darrell G. Schlom, James S. Harris, K. E. von Dessonneck, Z. J. Chen, Ivan Bozovic, James N. Eckstein
Publikováno v:
SPIE Proceedings.
The molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O films is reported. The advantage of using ozone rather than molecular oxygen for the growth of cuprate superconductors by molecular beam epitaxy (MBE) is discussed. Molecular beams of the c
Autor:
Darrell G. Schlom, J. N. Eckstein, Ivan Bozovic, Zongjian Chen, A. F. Marshall, K. E. von Dessonneck, James S. Harris, Jr.
Publikováno v:
SPIE Proceedings.
Autor:
John C. Bravman, Z. J. Chen, J. T. Sizemore, Darrell G. Schlom, Ivan Bozovic, J. N. Eckstein, K. E. von Dessonneck, James S. Harris
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:68-69
Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the subst
Autor:
R. Yeats, K. E. von Dessonneck
Publikováno v:
Applied Physics Letters. 44:145-147
Techniques for passivating In0.53Ga0.47As, InGaAsP, InP, and InGaAsP/InP p‐n junction structures with polyimide have been developed. Low stable leakage current is maintained for prolonged bias, even after exposure to high temperatures (∼320 °C)
Autor:
F. Turner, S. K. Streiffer, E. S. Hellman, K. E. von Dessonneck, C. Webb, James S. Harris, John C. Bravman, Darrell G. Schlom, James N. Eckstein, M. R. Beasley, T. H. Geballe
Publikováno v:
Applied Physics Letters. 53:1660-1662
Heteroepitaxial Dy‐Ba‐Cu‐O films have been grown in situ on SrTiO3 substrates using an oxygen plasma beam and elemental source beams in a modified molecular beam epitaxy machine. By periodically shuttering the Dy and Ba beams during growth, fla
Autor:
Z. J. Chent, Ann F. Marshall, K. E. Von Dessonneck, J. T. Sizemore, James S. Harris, D. G. Schlomtt, I. Bozo Vic, J. C. Bravmant, James N. Eckstein
Publikováno v:
MRS Proceedings. 169
The in situ epitaxial growth of Bi‐Sr‐Ca‐Cu‐O films by molecular beam epitaxy (MBE) is reported. The suitability of ozone to the MBE growth of cuprate superconductors is discussed. Molecular beams of the constituents were periodically shutter
Autor:
F. Turner, M. R. Beasley, E. S. Hellman, C. Webb, K. E. von Dessonneck, T. H. Geballe, James S. Harris, Darrell G. Schlom, James N. Eckstein, Z. J. Chen
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:319
We report the development of molecular‐beam epitaxy (MBE) techniques for the growth of high‐temperature, perovskite‐like superconductors. The use of a plasma source of active oxygen allows the in situ growth of such layers. Some of the films gr