Zobrazeno 1 - 10
of 104
pro vyhledávání: '"K. E. Miyano"'
Publikováno v:
Chemistry of Materials. 12:1378-1385
To avoid the technical difficulties encountered with high-temperature processing techniques, low-temperature sol−gel processes have been examined as routes to the Cr-doped olivine, Mg2SiO4, and the structural analogues Ca2SiO4 and Ca2GeO4. Gelation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc407c81036382aa4b8d5d082805eca0
https://doi.org/10.1021/cm990730+
https://doi.org/10.1021/cm990730+
Moss–Burstein and plasma reflection characteristics of heavily doped n-type InxGa1−xAs and InPyAs1−y
Autor:
Walter Wolf, D. M. DePoy, Arthur J Freeman, Fred H. Pollak, P. F. Baldasaro, Paul Sharps, Todd Holden, W. Mannstadt, Ryoji Asahi, Michael Timmons, Clint B. Geller, K. E. Miyano, J. E. Raynolds, G. W. Charache
Publikováno v:
Journal of Applied Physics. 86:452-458
Degenerately doped (>1019 cm−3) n-type InxGa1−xAs (x∼0.67) and InPyAs1−y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592656803641546b71681c8cfe13234c
https://doi.org/10.1063/1.370751
https://doi.org/10.1063/1.370751
Autor:
E. D. Crozier, Simon P. Watkins, James A. Gupta, K. E. Miyano, Joseph G. Pellegrino, Joseph C. Woicik
Publikováno v:
Journal of Crystal Growth. 195:34-40
X-ray standing wave and X-ray diffraction measurements were used to determine the structure of nominal 1 monolayer and 1/2 monolayer InAs films buried in GaAs(0 0 1). The films were grown by atomic layer epitaxy using trimethylgallium, tertiarybutyla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab4ce1d162c5ed7a54e8d1391c12a99
https://doi.org/10.1016/s0022-0248(98)00636-8
https://doi.org/10.1016/s0022-0248(98)00636-8
Autor:
Bruce Steiner, S. G. Bompadre, Larry B. Sorensen, K. E. Miyano, Johnny P. Kirkland, Bruce Ravel, Joseph G. Pellegrino, Joseph C. Woicik, Charles E. Bouldin, Julie O. Cross
Publikováno v:
Physical Review B. 58:R4215-R4218
Diffraction anomalous fine-structure measurements performed at both the Ga and As {ital K} edges have determined the Ga-As bond length to be 2.442{plus_minus}0.005thinsp{Angstrom} in a buried, 213-{Angstrom}-thick Ga{sub 0.785}In{sub 0.215}As layer g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2452c0338811be56059c667515cb845f
https://doi.org/10.1103/physrevb.58.r4215
https://doi.org/10.1103/physrevb.58.r4215
Autor:
Z. H. Lu, K. E. Miyano, C. A. King, Joseph C. Woicik, T.-L. Lee, R. W. Johnson, Joseph G. Pellegrino
Publikováno v:
Physical Review B. 57:14592-14595
Extended x-ray absorption fine structure performed at the Ge K edge has found the Ge-Ge and Ge-Si bond lengths in a series of crystalline Ge{sub x}Si{sub 1{minus}x} alloys (x{le}0.5) to be compositionally dependent. This accurate measurement was made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78efc0a5a9a1ad98d2bfa8d1a04cb5e1
https://doi.org/10.1103/physrevb.57.14592
https://doi.org/10.1103/physrevb.57.14592
Autor:
K. E. Miyano, Uwe Arp, Stephen H. Southworth, Frank P. Larkins, Timothy E. Meehan, Tiffany R. Walsh
Publikováno v:
Physical Review A. 57:2430-2435
Sulfur K{beta} x-ray-emission spectra from carbonyl sulfide have been measured with resonant excitation at the sulfur K absorption threshold and compared with results of self-consistent field and singles-doubles configuration-interaction calculations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264a62d21ecb8bf0d6d922c06803d3e8
https://doi.org/10.1103/physreva.57.2430
https://doi.org/10.1103/physreva.57.2430
Autor:
S. Khalid, T.-L. Lee, K. E. Miyano, Larry B. Sorensen, Joseph G. Pellegrino, Joseph C. Woicik, S. G. Bompadre, B. Steiner
Publikováno v:
Physical Review Letters. 79:5026-5029
Extended x-ray absorption fine structure measurements performed at $\mathrm{In}\ensuremath{-}K$ edge have resolved the outstanding issue of bond-length strain in semiconductor-alloy heterostructures. We determine theIn-As bond length to be $2.581\ifm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7d948c664d8c12b96679b5b3491d19
https://doi.org/10.1103/physrevlett.79.5026
https://doi.org/10.1103/physrevlett.79.5026
Publikováno v:
Physical Review B. 55:15386-15389
The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64ee11a4bdf0fe7e4391ad16be7ccda5
https://doi.org/10.1103/physrevb.55.15386
https://doi.org/10.1103/physrevb.55.15386
Publikováno v:
Physical Review B. 54:12022-12028
We have measured the potassium {ital K}{sub {beta}} and chlorine {ital K}{sub {beta}} resonant Raman x-ray scattering from KCl. Strong {ital K}-shell absorption peaks are directly reflected in the resonant Raman spectra. The emission spectra are qual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33dda5280185039707072acfd1922d5d
https://doi.org/10.1103/physrevb.54.12022
https://doi.org/10.1103/physrevb.54.12022
Autor:
Tom Kendelewicz, S. A. Yoshikawa, W. E. Spicer, Piero Pianetta, K. E. Miyano, Joseph C. Woicik, P. L. Cowan, Gregory S. Herman
Publikováno v:
Physical Review B. 53:15425-15428
By combining the surface sensitivity of low-energy elastic photoelectrons with the position sensitivity of the x-ray standing-wave technique, we have determined both the Ag and Si atomic heights at the Si(111)$\sqrt{3}$\ifmmode\times\else\texttimes\f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e8d31265102e04694810d277823514
https://doi.org/10.1103/physrevb.53.15425
https://doi.org/10.1103/physrevb.53.15425