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pro vyhledávání: '"K. E. Lutterodt"'
Autor:
R. Glew, Muhammad A. Alam, R. People, L.J.P. Ketelsen, J.A. Grenko, Peter Ilinski, Barry P. Lai, Zhonghou Cai, S.K. Sputz, W. Rodrigues, W. Yun, K. E. Lutterodt, E. D. Isaacs, Daniel Legnini, J. M. Vandenberg, Mark S. Hybertsen
Publikováno v:
Applied Physics Letters. 75:100-102
Synchrotron-based x-ray microbeam techniques have been used to map crystallographic strain and multilayer thickness in micro-optoelectronic devices produced with the selective area growth technique. Our main results show that growth enhancements in I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5891cc293b9bc42ea3bd39232325c0
https://doi.org/10.1063/1.124288
https://doi.org/10.1063/1.124288
