Výsledky vyhledávání - "K. E. Kudryavtsev"

LASER GENERATION OF CdxHg1–xTe/CdyHg1–yTe QUANTUM WELL HETEROSTRUCTURE WITH MICRODISK RESONATORS AT A WAVELENGTH OF 4.1—5.1 μm

Autor: А. А. Razova, V. V. Utochkin, M. A. Fadeev, V. V. Rumyantsev, A. A. Dubinov, K. E. Kudryavtsev, D. V. Shengurov, E. E. Morozova, E. V. Skorohodov, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, S. V. Morozov

Publikováno v: Journal of Applied Spectroscopy. 89:632-637

The first results on the study of photoluminescence and lasers radiation spectra of a CdHgTe solid solution-based quantum well structure with microdisk cavities of different diameters are demonstrated. It is shown that the presence of cavities contri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40bf444c9cd142ed76a4e1f2f206a402
https://doi.org/10.47612/0514-7506-2022-89-5-632-637

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Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

Autor: V. Ya. Aleshkin, Nikolay N. Mikhailov, Vladimir Rumyantsev, N. S. Kulikov, K. E. Kudryavtsev, S. A. Dvoretskii, Mikhail A. Fadeev, A. A. Razova, L. A. Kushkov, S. V. Morozov, V. V. Utochkin, Alexander A. Dubinov, V. I. Gavrilenko

Publikováno v: Semiconductors. 54:1365-1370

Stimulated emission based on interband transitions depending on the pumping wavelength is studied for heterostructures with Hg(Cd)Te/CdHgTe quantum wells in the wavelength region of 3–4 μm. The minimal value of the threshold power density and maxi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8ec08793583d81188b52a2652f622f1
https://doi.org/10.1134/s106378262010019x

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Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

Autor: V. Ya. Aleshkin, S. V. Morozov, Andrey P. Fokin, K. V. Maremyanin, Vladimir V. Parshin, Vladimir Rumyantsev, K. E. Kudryavtsev, M. Yu. Glyavin, Gregory G. Denisov, Alexander A. Dubinov, E. A. Serov, S. S. Morosov

Publikováno v: Semiconductors. 54:1069-1074

The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06b90fed62ba823f1dc8b0cfafe8ede3
https://doi.org/10.1134/s1063782620090195

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Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Autor: K. E. Kudryavtsev, V. V. Rumyantsev, V. V. Utochkin, A. A. Dubinov, V. Ya. Aleshkin, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretskii, V. G. Remesnik, V. I. Gavrilenko, S. V. Morozov

Publikováno v: Journal of Applied Physics. 133:074301

In this work, we study stimulated emission (SE) at 3–4 μm wavelengths from optically pumped bulk HgCdTe and HgTe/CdHgTe quantum-well heterostructures. It is proposed that, under intense excitation of such structures, energy relaxation of hot elect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9091395c07ca679d6857c3703a4e9642
https://doi.org/10.1063/5.0130651

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Coherent Emission in the Vicinity of 10 THz due to Auger-Suppressed Recombination of Dirac Fermions in HgCdTe Quantum Wells

Autor: Alexander A. Dubinov, Vladimir Rumyantsev, Nikolay N. Mikhailov, Sergey V. Morozov, Mikhail A. Fadeev, K. E. Kudryavtsev, Vladimir Ya. Aleshkin, Maksim Zholudev, S. A. Dvoretskii, V. V. Utochkin, Frederic Teppe, Vladimir I. Gavrilenko

Publikováno v: ACS photonics
ACS photonics, American Chemical Society, 2021, 8 (12), pp.3526-3535. ⟨10.1021/acsphotonics.1c01111⟩

The discovery of Dirac fermions in a number of 2D and 3D materials boosted the solid-state research in an unprecedented way. Among the many hopes of using their exceptional physical properties, it ...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c27b75520a1ca127a4a11e3a00bff61
https://hal.archives-ouvertes.fr/hal-03497995

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Mid-IR lasing up to 260 K in HgCdTe/CdHgTe QW structure with microdisk resonators under optical pumping

Autor: Elena E. Morozova, Vladimir Rumyantsev, K. E. Kudryavtsev, Sergey V. Morozov, Nikolay N. Mikhailov, D.V. Shengurov, Mikhail A. Fadeev, V. V. Utochkin, Sergey A. Dvoretsky, Anna A. Razova

Publikováno v: 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).

We report on lasing up to 5.1 μm in an array of microdisk resonators of various sizes (5 – 40 μm in diameter) formed from the waveguide heterostructure with multiple HgCdTe/CdHgTe quantum wells (QWs). The lasing was observed at temperatures as hi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d4bd5b647c86173f839100802ca7f98
https://doi.org/10.1109/irmmw-thz50926.2021.9567214

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Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping

Autor: A. A. Sitnikova, V. A. Solov’ev, Stefan Ivanov, M. Yu. Chernov, S. V. Morozov, K. E. Kudryavtsev

Publikováno v: JETP Letters. 110:313-318

Metamorphic laser heterostructures In(Sb, As)/In0.81Ga0.19As/In0.75Al0.25As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb insertions in a 10-nm InAs layer have been grown by molecular beam epitaxy on GaAs (001) substrates.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b3fb81b81f4082a75789c8978473c0a
https://doi.org/10.1134/s0021364019170120

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Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

Autor: Alexander A. Dubinov, S. M. Nekorkin, K. E. Kudryavtsev, V. Ya. Aleshkin, N. V. Baidus, D. G. Reunov, A. V. Kruglov

Publikováno v: Semiconductors. 53:1138-1142

The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18cfdb7a2c37b1f3a3e3c4099fc493c0
https://doi.org/10.1134/s1063782619080037

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Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing

Autor: K. E. Kudryavtsev, D. N. Lobanov, L. V. Krasilnikova, A. N. Yablonskiy, P. A. Yunin, E.V. Skorokhodov, M. A. Kalinnikov, A.V. Novikov, B. A. Andreev, Z. F. Krasilnik

Publikováno v: ECS Journal of Solid State Science and Technology. 11:014003

Near-infrared stimulated emission (SE) from InGaN layers grown by plasma-assisted molecular beam epitaxy has been studied, and the influence of the growth temperature (T gr) on the SE threshold has been revealed. The obtained experimental data strong

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce30113c2dafe2b46f44fcef425a729c
https://doi.org/10.1149/2162-8777/ac4d80

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