Zobrazeno 1 - 10
of 14
pro vyhledávání: '"K. E. Krohn"'
Autor:
S. Deneault, K. E. Krohn, R. Wright, J. M. Lawless, D. D. Flechtner, James E. Butler, Theodore M. Lyszczarz, Michael W. Geis
Publikováno v:
Semiconductor Science and Technology. 18:S67-S71
Exceptionally pure epitaxial diamond layers have been grown by microwave plasma chemical vapour deposition, which have low boron doping, from 5 × 1014 to 1 × 1016 cm−3, and the compensating n-type impurities are the lowest reported for any semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b466894042c53be6295252aaa5198a8c
https://doi.org/10.1088/0268-1242/18/3/309
https://doi.org/10.1088/0268-1242/18/3/309
Autor:
Michael W. Geis, K. E. Krohn, M.B. Stern, Theodore M. Lyszczarz, N.N. Efrernow, J.C. Twichell
Publikováno v:
IEEE Electron Device Letters. 18:595-598
This letter describes the fabrication and operation of diamond grit gated cathodes. The structure is similar to Spindt-type cathode, but the field emission cone is replaced with a more planar diamond grit layer 50 to 200 nm thick. Although the minimu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdaa410757d001523c348d5366cb7f17
https://doi.org/10.1109/55.644082
https://doi.org/10.1109/55.644082
Autor:
Theodore M. Lyszczarz, R. Wright, Michael W. Geis, James E. Butler, K. E. Krohn, D. D. Flechtner, M. F. Marchant, J.C. Twichell, S. Deneault, J. M. Lawless
Publikováno v:
Applied Physics Letters. 84:4620-4622
Epitaxial diamond with remarkably low p-type doping (1×1014–1×1017 cm−3) and exceptionally low compensation ∼1×1013 cm−3, has enabled the demonstration of a optically-switched conduction modulation of the epitaxial layer. Charge exchange b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8e8c04c73a5db02f36dd906d540e3a7
https://doi.org/10.1063/1.1757637
https://doi.org/10.1063/1.1757637
Autor:
S. Deneault, W. Geis, R. Sinta, D. R. Calawa, M. F. Marchant, W. Mowers, S. J. Spector, K. E. Krohn, Theodore M. Lyszczarz
Publikováno v:
Applied Physics Letters. 84:3729-3731
Single-crystal optical waveguides of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST), an organic material with a large electro-optic coefficient, have been obtained. DAST decomposes at its melting temperature, making its growth from the melt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069305e6d5be3d61ec860b2099de1ebe
https://doi.org/10.1063/1.1723697
https://doi.org/10.1063/1.1723697
Autor:
Theodore M. Bloomstein, Cihan Yilmaz, Sivasubramanian Somu, M. F. Marchant, Vladimir Liberman, K. E. Krohn, Yolanda Echegoyen, Mordechai Rothschild, Susan G. Cann, Ahmed Busnaina
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 22(38)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a15615b2104e3ba8cbc2eb29eb633d02
https://pubmed.ncbi.nlm.nih.gov/20626013
https://pubmed.ncbi.nlm.nih.gov/20626013
Publikováno v:
Alternative Lithographic Technologies.
We have developed a processing method that significantly reduces the number of steps necessary to yield a surface that directs block copolymer assembly. This methodology employs a single resistless lithography step that directly changes the surface e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e277205e0d7247e872c788f019e454b8
https://doi.org/10.1117/12.814625
https://doi.org/10.1117/12.814625
Autor:
K. E. Krohn, M. F. Lemon, L. Brubaker, Robert Clayton Wheland, Hoang Vi Tran, D. Hardy, S. J. McLain, Mureo Kaku, O. Nagao, Roger H. French, Douglas J. Adelman, Jerald Feldman, Charles Y. Chen, Vladimir Liberman, Michael T. Mocella, B. E. Fischel, Min K. Yang, A. L. Shoe, B. Fones, Weiming Qiu
Publikováno v:
SPIE Proceedings.
To identify the most practical and cost-effective technology after water immersion lithography (Gen1) for sub-45 nm half pitches, the semiconductor industry continues to debate the relative merits of water double patterning (feasible, but high cost o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2766be7997cb6db89d65aa664d548b
https://doi.org/10.1117/12.712234
https://doi.org/10.1117/12.712234
Autor:
J.C. Twichell, Theodore M. Lyszczarz, Michael W. Geis, N. N. Efremow, M. Kordesch, K. E. Krohn, Carl O. Bozler, D.D. Rathman, Mark A. Hollis, R. Uttaro
Publikováno v:
[Proceedings] IVMC '93 Sixth International Vacuum Microelectronics Conference.
Summary form only given. Diamond has several properties that give it unique advantages for use in field-emission cathodes. Diamond is the only known air-stable negative electron affinity (NEA) material. This NEA property may allow for field emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb05d20a660856dc82884c7bb2e3302
https://doi.org/10.1109/ivmc.1993.700331
https://doi.org/10.1109/ivmc.1993.700331
Autor:
Theodore M. Lyszczarz, Michael W. Geis, David L. Cooke, K. E. Krohn, S. Deneault, M. F. Marchant
Publikováno v:
MRS Proceedings. 891
This note reports on a surface field effect transistor, SFET, where the electron channel consists of the interface between vacuum and a Cs-doped glass, and an electrode on the back of the glass substrate is used as the gate. The device has a transcon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08a54902496c3cbd605f49135a6f4818
https://doi.org/10.1557/proc-0891-ee07-11
https://doi.org/10.1557/proc-0891-ee07-11
Publikováno v:
Applied Physics Letters. 68:2294-2296
Field emission of electrons from boron‐ and nitrogen‐doped diamond is compared. Emission from boron‐doped diamond requires vacuum electric fields of 20–50 V μm−1, while nitrogen‐doped, type Ib diamond requires fields of 0–1 V μm−1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebff08348279acc7b2d7e88eb5399def
https://doi.org/10.1063/1.116168
https://doi.org/10.1063/1.116168