Zobrazeno 1 - 10
of 107
pro vyhledávání: '"K. Doverspike"'
Autor:
D. Slater, D. Emerson, K. Doverspike, John A. Edmond, K. Haberern, G. E. Bulman, Hua-Shuang Kong, H. Dieringer
Publikováno v:
Materials Science Forum. :1477-1482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d905c0bea15470c08c8f6d8eae370c
https://doi.org/10.4028/www.scientific.net/msf.338-342.1477
https://doi.org/10.4028/www.scientific.net/msf.338-342.1477
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5427304014cb384ad60c567297624db
https://doi.org/10.4028/www.scientific.net/msf.338-342.1643
https://doi.org/10.4028/www.scientific.net/msf.338-342.1643
Publikováno v:
Journal of Materials Research. 12:646-650
Scanning tunneling microscopy images are reported for the wurtzite GaN(0001) surface. Terraces are observed, with three kinds of defect structures that are assigned to ordered N-vacancies: (i) striations perpendicular to the step edges, (ii) row defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd633e612c2ff6d366a0ecd6bb52d389
https://doi.org/10.1557/jmr.1997.0098
https://doi.org/10.1557/jmr.1997.0098
Publikováno v:
Solid-State Electronics. 41:177-180
The d.c., microwave, and high-temperature characteristics of Si-doped MESFETs with and without n+ ohmic contact layers, Si 3 N 4 GaN MISFETs, and AlN GaN HFETs are presented. The highest transconductance and microwave performance were observed for 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7d2689829ce3f643aed922a2b0704e
https://doi.org/10.1016/s0038-1101(96)00161-x
https://doi.org/10.1016/s0038-1101(96)00161-x
Publikováno v:
Superlattices and Microstructures. 20:145-148
The wurtzite GaN(0001) surface is imaged by scanning tunneling microscopy. Terraces are observed with line-defect structures on them: primarily regularly spaced striations perpendicular to step edges. A model of these striations as ordered N-vacancie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e2d72b5ee1022e5432030ba7cde04a
https://doi.org/10.1006/spmi.1996.0060
https://doi.org/10.1006/spmi.1996.0060
Autor:
Y. J. Wang, H. K. Ng, T. Ikedo, Isamu Akasaki, H. Amono, D. K. Gaskill, K. Doverspike, Robert S. Kaplan
Publikováno v:
Journal of Applied Physics. 79:8007-8010
Magneto‐optical experiments have been performed on free and bound electrons in GaN films and GaN/AlGaN heterojunctions. Cyclotron resonance of two dimensional electron gas in GaN/ AlxGa1−xN heterojunctions has yielded m* = 0.23 m0, x‐dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c6c17431dfcaa1a8b312041d9f13a57
https://doi.org/10.1063/1.362351
https://doi.org/10.1063/1.362351
Publikováno v:
Journal of Applied Physics. 79:110-119
The growth, structure, and annealing behavior of Al films, formed by in situ vapor deposition on GaN(0001)–(1×1) near 25 °C, have been studied using Auger, electron energy loss, x ray and ultraviolet photoemission spectroscopies and low‐energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a034cb998a59583fbb94e50d20f5f2a7
https://doi.org/10.1063/1.360917
https://doi.org/10.1063/1.360917
Autor:
F. K. Koschnick, Johann Martin Spaeth, K. Doverspike, D. K. Wickenden, D. Kurt Gaskill, Evan R. Glaser, Larry B. Rowland
Publikováno v:
Materials Science Forum. :37-42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a388384770a77620fcccb4f0ec1ac4d1
https://doi.org/10.4028/www.scientific.net/msf.196-201.37
https://doi.org/10.4028/www.scientific.net/msf.196-201.37
Autor:
Jaime A. Freitas, Alma Wickenden, D. K. Gaskill, K. Doverspike, Larry B. Rowland, Peter H. Chi, David S. Simons
Publikováno v:
Journal of Electronic Materials. 24:1547-1550
The silicon doping of n-type GaN using disilane has been demonstrated for films grown on sapphire substrates by low pressure organometallic vapor phase epitaxy. The binding energy of an exciton bound to a neutral Si donor has been determined from low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e3910ac390140b50183a39a91c5e72
https://doi.org/10.1007/bf02676809
https://doi.org/10.1007/bf02676809
Publikováno v:
Journal of Electronic Materials. 24:1525-1530
The growth issues known to effect the quality of GaN organometallic vapor phase epitaxial films are reviewed and the best 300Kmobility vs electron concentration data are discussed. The data probably represent transport properties intrinsic to films g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e445a39f784c5143c296d27ba48f7738
https://doi.org/10.1007/bf02676805
https://doi.org/10.1007/bf02676805