Zobrazeno 1 - 3
of 3
pro vyhledávání: '"K. D. Vanyukhin"'
Publikováno v:
Russian Microelectronics. 44:564-568
The Ti/Al/Ni/Au multilayer metallization system is widespread in the technology of n-GaN-based devices. Herein, the mechanisms of the formation of the surface roughness of the Ti/Al/Ni/Au metallization (with 300 nm hillocks) upon annealing in a nitro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51f27e69c55bc6c45f7be438ff0bb7e
https://doi.org/10.1134/s1063739715080132
https://doi.org/10.1134/s1063739715080132
Publikováno v:
Russian Microelectronics. 43:569-574
This paper studies the properties of ITO films obtained by electron beam evaporation in a wide range of conditions: oxygen pressure from 5 × 10−4 to 4 × 10−2 Pa and the evaporation rate of 0.075–0.4 nm/s. Evaporation was carried out from gran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8ec674de1b0ba49038835854c86b4e
https://doi.org/10.1134/s1063739714080137
https://doi.org/10.1134/s1063739714080137
Publikováno v:
Russian Microelectronics. 42:483-487
Nanosized Ti, Al, Ni, Cr, and Au films were deposited onto KEF-20 (100)-oriented silicon plates with a diameter of 100 mm using the method of thermal evaporation in a vacuum. The value and uniformity of the distribution of the specific electrical res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40bf5e8232039187c7b1d3c2dbae0161
https://doi.org/10.1134/s1063739713080143
https://doi.org/10.1134/s1063739713080143