Zobrazeno 1 - 10
of 47
pro vyhledávání: '"K. D. Tsendin"'
Publikováno v:
Semiconductors. 52:1607-1610
The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6eb040d5e796e7f04ac5a9f1557cdf
https://doi.org/10.1134/s1063782618120084
https://doi.org/10.1134/s1063782618120084
Autor:
N. A. Bogoslovskiy, K. D. Tsendin
Publikováno v:
Solid-State Electronics. 129:10-15
In the phase-change memory (PCM) crystallization occurs in the high-current filament which forms during switching to the conductive state. In the present paper we conduct a numerical modeling of the current filament formation dynamics in thin chalcog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d32e2f70ad3c98814b9514c50933d7e
https://doi.org/10.1016/j.sse.2016.11.018
https://doi.org/10.1016/j.sse.2016.11.018
Publikováno v:
Semiconductors. 50:888-893
The spectra of donor–acceptor light absorption and luminescence in lightly doped and lightly compensated semiconductors are calculated. In the photoluminescence calculation, two limiting cases of long and short carrier lifetimes relative to the car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0c53448a34c97880ac4a94a9a18b20
https://doi.org/10.1134/s1063782616070034
https://doi.org/10.1134/s1063782616070034
Publikováno v:
Semiconductors. 50:941-946
The I–V characteristics obtained for layers of chalcogenide vitreous semiconductor of the Ge–Sb–Te system in the current-generator mode are investigated. The instability region, i.e., the region of conductivity oscillations, observed in the cas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb03de7da7454031a07a79c299ce0602
https://doi.org/10.1134/s1063782616070046
https://doi.org/10.1134/s1063782616070046
We report numerical and analytical studies of the donor-acceptor recombination in compensated semiconductors. Our calculations take into account random electric fields of charged impurities which are important in non zero compensation case. We show t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef1a8664ee51fe4b17e6215c53f5b3db
Publikováno v:
Technical Physics. 59:546-550
The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an alternative version using a current generator. The results obtained in the latter case refle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc0a5da1215df4f45f090c8afa5d3d73
https://doi.org/10.1134/s1063784214040100
https://doi.org/10.1134/s1063784214040100
Autor:
K. D. Tsendin
Publikováno v:
Universal Journal of Physics and Application. 8:53-59
A review of the main experimental features of switching and memory effects in chalcogenide glassy semiconductors (CGS), review and analyze of the models of these phenomena was done. An electronic-thermal model of the switching effect taking into acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e308096f83fd2941ad2f4bf2ff3ca5f9
https://doi.org/10.13189/ujpa.2014.020201
https://doi.org/10.13189/ujpa.2014.020201
Autor:
Lyudmila Kazakova, Sergey Jakovlev, Nurlan Almasov, Sergey Fefelov, N. R. Guseinov, K. D. Tsendin, Nataly Korobova, Sergey Kozyukhin, N. A. Bogoslovskiy
Publikováno v:
Journal of Non-Crystalline Solids. 358:3299-3303
Switching and memory effects in as-deposited amorphous Ge2Sb2Te5 films with a considerable concentration of crystalline nuclei have been investigated. Variation of the phase composition of the sample has been confirmed by Raman spectroscopy data. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd605b5d2bd69f7aade55badd0c9832
https://doi.org/10.1016/j.jnoncrysol.2012.09.008
https://doi.org/10.1016/j.jnoncrysol.2012.09.008
Autor:
K. D. Tsendin
Publikováno v:
physica status solidi (b). 249:1962-1965
In the present paper one can find a short review of the main experimental results on the switching effect and its theoretical analysis, which have been elaborated in the Ioffe Institute, Russia, from 1963 until today.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f36be2f3db9b94c09b07ef0ccedf4c3
https://doi.org/10.1002/pssb.201200534
https://doi.org/10.1002/pssb.201200534
Autor:
K. D. Tsendin, N. A. Bogoslovskiy
Publikováno v:
Semiconductors. 46:559-590
Switching and memory effects in chalcogenide glassy semiconductors have been known for nearly fifty years. However, the physics of these effects remains unclear. Recent interest in this problem is caused by active developments of a new generation non
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dadf6d211503b36fa367c245170a4c36
https://doi.org/10.1134/s1063782612050065
https://doi.org/10.1134/s1063782612050065