Zobrazeno 1 - 7
of 7
pro vyhledávání: '"K. D. Shcherbatchev"'
Autor:
Dae-Woo Jeon, V. N. Sokolov, K. D. Shcherbatchev, Han Su Cho, Lee Woon Jang, Alexander Y. Polyakov, Jin Hyeon Yun, A. V. Govorkov, N. B. Smirnov, Jong Hyeob Baek, In Hwan Lee
Publikováno v:
Journal of Alloys and Compounds. 589:507-512
Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::738c9671fad9616d55dfb7df8c34059c
https://doi.org/10.1016/j.jallcom.2013.12.034
https://doi.org/10.1016/j.jallcom.2013.12.034
Autor:
K. D. Shcherbatchev, D. I. Merkurisov, M. I. Voronova, N. G. Kolin, Vladimir T. Bublik, V. M. Boĭko
Publikováno v:
Semiconductors. 40:621-629
The results of studying the features of the effect of irradiation with fast and full-spectrum reactor neutrons and subsequent heat treatments on the structural characteristics of InP single crystals are reported. It is shown that, in contrast to othe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c46386a6ad08e3bc646b0c03f131064
https://doi.org/10.1134/s1063782606060017
https://doi.org/10.1134/s1063782606060017
Publikováno v:
Crystallography Reports. 48:187-191
The influence of photoexcitation on the formation of the defect structure in GaAs crystals implanted with 200 keV Ar+ ions at doses of 1 × 1013, 3 × 1013, and 5 × 1013 cm−2 has been studied by high-resolution Xray diffractometry. It was found th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5cdbee8b79d97249a17b0dde46e5c9
https://doi.org/10.1134/1.1564192
https://doi.org/10.1134/1.1564192
Autor:
E. A. Petrova, N. B. Smirnov, V. T. Bublik, Andrei Osinsky, A. V. Govorkov, Stephen J. Pearton, Peter Chow, A. V. Markov, K. D. Shcherbatchev, Andrew M. Wowchak, T. G. Yugova, Alexander Y. Polyakov, Amir M. Dabiran
Publikováno v:
Journal of The Electrochemical Society. 154:H749
Semi-insulating GaN(Fe) films grown by molecular beam epitaxy (MBE) were characterized by measuring electrical properties, deep-level spectra, Fe distribution profiles, microcathodoluminescence (MCL) spectra, electron-beam-induced current, and MCL im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db6eaeff203e6935945f57ecec1a60a4
https://doi.org/10.1149/1.2749094
https://doi.org/10.1149/1.2749094
Autor:
K. D. Shcherbatchev, Andrei Osinsky, A. V. Govorkov, M. I. Voronova, Amir M. Dabiran, V. T. Bublik, Stephen J. Pearton, Alexander Y. Polyakov, N. B. Smirnov
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:69
Electrical photoelectrical, and microcathodoluminescence properties were measured on doped p-GaN superlattices prepared by molecular beam epitaxy on c-plane sapphire substrates. The photosensitivity of such superlattices is at least two orders of mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90491e211b23e3a2e4d2efca233f85d7
https://doi.org/10.1116/1.2406062
https://doi.org/10.1116/1.2406062
Autor:
N. G. Kolin, A. Dabirian, A. V. Markov, Cheul Ro Lee, M. I. Voronova, Andrei Osinsky, V. M. Boiko, K. D. Shcherbatchev, In Hwan Lee, Alexander Y. Polyakov, D. I. Merkurisov, V. T. Bublik, N. B. Smirnov, Stephen J. Pearton, A. V. Govorkov
Publikováno v:
Journal of Applied Physics. 100:093715
Undoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d217fa3d2c03499fa63212b6d43072
https://doi.org/10.1063/1.2361157
https://doi.org/10.1063/1.2361157
Autor:
D. I. Merkurisov, Amir M. Dabiran, V. T. Bublik, Andrei Osinsky, A. V. Govorkov, N. G. Kolin, V. M. Boiko, Stephen J. Pearton, A. V. Markov, N. B. Smirnov, K. D. Shcherbatchev, Alexander Y. Polyakov, M. I. Voronova
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:2256
Electrical properties, admittance, and microcathodoluminescence spectra are compared for p‐GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300K hole concentration a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb4f3fed4402ee186242f5338a13f69
https://doi.org/10.1116/1.2338045
https://doi.org/10.1116/1.2338045