Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K. D. Scherbatchev"'
Autor:
S. S. Nagalyuka, Vladimir T. Bublik, Alexandr Dmitrievich Roenkov, A A Antipov, I. S. Barash, T.Yu. Chemekova, Heikki Helava, E. N. Mokhov, K. D. Scherbatchev, Yu.N. Makarov, S Yu Kurin
Publikováno v:
Russian Microelectronics. 42:477-482
Some results on the creation of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown on aluminum nitride (AlN) substrates using the method of chloride-hydride epitaxy are presented. The peak wavelengths lie within the range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e264fe520257dde3f9a4c31b7c4eb4b
https://doi.org/10.1134/s1063739713080039
https://doi.org/10.1134/s1063739713080039
Autor:
T.Yu. Chemekova, S. S. Nagalyuk, Vladimir T. Bublik, I. A. Belogorokhov, Heikki Helava, N. B. Smirnov, A. V. Govorkov, K. D. Scherbatchev, A. Ya. Polyakov, Oleg Avdeev, E. N. Mokhov, Yu.N. Makarov
Publikováno v:
Russian Microelectronics. 40:629-633
The structural characteristics and electrical properties of bulk aluminum nitride crystals grown by sublimation and used as substrates for light emitting diode (LED) structures and AlGaN/GaN field effect transistors were studied. The crystalline perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c91571eabb813091f400b4f09bd59280
https://doi.org/10.1134/s1063739711080178
https://doi.org/10.1134/s1063739711080178
Autor:
T. G. Yugova, E. N. Mokhov, T.Yu. Chemekova, K. D. Scherbatchev, Heikki Helava, N. B. Smirnov, Oleg Avdeev, A. V. Govorkov, Alexander Y. Polyakov, Yu.N. Makarov, S. S. Nagalyuk
Publikováno v:
Physica B: Condensed Matter. 404:4939-4941
Structural properties, electrical properties, deep traps spectra, optical properties of bulk 50-mm-diameter AlN crystals prepared by physical vapor transport (PVT) were studied by means of X-ray diffraction, selective etching, admittance spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5ec791c60bbc14ff78607f23aaf962
https://doi.org/10.1016/j.physb.2009.09.052
https://doi.org/10.1016/j.physb.2009.09.052
Autor:
Hiroshi Amano, K. D. Scherbatchev, Alexander Y. Polyakov, A. V. Markov, T. G. Yugova, N. B. Smirnov, Takeshi Kawashima, V. T. Bublik, A. V. Govorkov, E. A. Petrova
Publikováno v:
Journal of Applied Physics. 105:063708
Structural and electrical properties of nonpolar m-GaN films grown on m-SiC using standard metalorganic chemical vapor deposition (MOCVD) and two versions of sidewall epitaxial lateral overgrowth were studied. It is shown that lateral overgrowth allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::749c44e4434619e43f78c7be6fbe60fe
https://doi.org/10.1063/1.3078769
https://doi.org/10.1063/1.3078769
Autor:
Alexander Y. Polyakov, Andrei Osinsky, Peter Chow, V. T. Bublik, Andrew M. Wowchak, K. D. Scherbatchev, T. G. Yugova, Bentao Cui, A. V. Govorkov, Stephen J. Pearton, A. V. Markov, Amir M. Dabiran, N. B. Smirnov
Publikováno v:
Journal of Applied Physics. 104:053702
The electrical and structural properties of AlN/GaN heterostructures grown by molecular beam epitaxy on sapphire are compared with those of AlGaN/GaN heterostructures. The structural characteristics as assessed by x-ray diffraction show little differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160d16152f49ece69e2489d3ba356c5e
https://doi.org/10.1063/1.2973463
https://doi.org/10.1063/1.2973463