Zobrazeno 1 - 4
of 4
pro vyhledávání: '"K. D. Rahner"'
Autor:
S. Burger, L. R. Danielson, E. Brown, G. Nichols, Christine A. Wang, P. F. Baldasaro, H. Ehsani, W.F. Topper, G. C. Taylor, Michael K. Connors, K. D. Rahner, Ramon U. Martinelli, S. Anikeev, D.M. Depoy, Z. Shellenbarger, M. W. Dashiell, D. Donetski, J Beausang, Jizhong Li, Serge Luryi, Gregory Belenky, Robin K. Huang, P. Talamo, George W. Turner, P. Fourspring
Publikováno v:
IEEE Transactions on Electron Devices. 53:2879-2891
InxGa1-xAsySb1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5876b94aefb3697d069f130d35bc4a
https://doi.org/10.1109/ted.2006.885087
https://doi.org/10.1109/ted.2006.885087
Autor:
K. D. Rahner, W.F. Topper, Jizhong Li, J. F. Beausang, G. Belenky, Michael K. Connors, L. R. Danielson, J. Azarkevich, S. Burger, G. Nichols, R. Marinelli, H. Ehsani, J. Hazel, P. Talamo, S. Luryi, George W. Turner, P. Fourspring, D. R. Taylor, G. Taylor, R. K. Huang, D. DePoy, E. Brown, S. Anikeev, P. F. Baldasaro, D. Donetski, Z. Shellenbarger, M. W. Dashiell, C. A. Wang
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00eecf067003cecfda9f58d841f18d5
https://doi.org/10.2172/837459
https://doi.org/10.2172/837459
Autor:
C. A. Wang, R. K. Huang, G. Taylor, P. Talamo, K. D. Rahner, H. Ehsani, W.F. Topper, J. Hazel, G. Nichols, G. Belenky, E. Brown, Z. Shellenbarger, M. W. Dashiell, D. R. Taylor, J. F. Beausang, George W. Turner, J. Azarkevich, P. F. Baldasaro, P. Fourspring, D. Donetski, D. DePoy, S. Anikeev, Michael K. Connors, L. R. Danielson, S. Luryi, Ramon U. Martinelli, Jizhong Li, S. Burger
Publikováno v:
AIP Conference Proceedings.
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice‐matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm2 multi‐chip diode modules with front‐surface spectral filters were tested in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5158c21063639ffd86eb614756359f5
https://doi.org/10.1063/1.1841919
https://doi.org/10.1063/1.1841919
Autor:
K. D. Rahner, L. R. Danielson, P. Fourspring, JL Vell, S. Burger, E. Brown, P. F. Baldasaro, Jane E. Oppenlander, M. W. Dashiell
Publikováno v:
AIP Conference Proceedings.
TPV technology has advanced rapidly in the last five years, with diode conversion efficiency approaching >30%, and filter efficiency of {approx}80%. These achievements have enabled repeatable testing of 20% efficient small systems, demonstrating the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b74a039c49e8443c7a0fdc9a5b1d925c
https://doi.org/10.1063/1.1841880
https://doi.org/10.1063/1.1841880